Alliance Memory, Inc. Memory AS6C4008-55BINTR

Description
SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 55ns 36-TFBGA (6x8)
Request a Quote Datasheet
Description
SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 55ns 36-TFBGA (6x8)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS6C4008-55BINTR-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 55ns 36-TFBGA (6x8)

SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 55ns 36-TFBGA (6x8)

Buy Now Datasheet
IC SRAM 4MBIT PARALLEL 36TFBGA

IC SRAM 4MBIT PARALLEL 36TFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - AS6C4008-55BINTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
AS6C4008-55BINTR
Integrated Circuits (ICs) - Memory - Memory AS6C4008-55BINTR
IC SRAM 4MBIT PARALLEL 36TFBGA

IC SRAM 4MBIT PARALLEL 36TFBGA

Supplier's Site
SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM - AS6C4008-55BINTR - Karl Kruse GmbH & Co. KG
Kaarst, Germany
SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM
AS6C4008-55BINTR
SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM AS6C4008-55BINTR
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet
Memory - AS6C4008-55BINTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 55 ns 36-TFBGA (6x8)

SRAM - Asynchronous Memory IC 4Mbit Parallel 55 ns 36-TFBGA (6x8)

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Karl Kruse GmbH & Co. KG Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AS6C4008-55BINTR-ND AS6C4008-55BINTR AS6C4008-55BINTR AS6C4008-55BINTR AS6C4008-55BINTR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4000 kbits 4000 kbits 4000 kbits 4000 kbits
Package Type 36-TFBGA BGA TFBGA36 BGA; 36-TFBGA
Unlock Full Specs
to access all available technical data

Similar Products

 - LP3913SQX-ADJ/NOPB - Rochester Electronics
Texas Instruments
Specs
Memory Category Flash
Package Type HVQFN48
View Details
Memory - 3354733 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
SDRAM - 1882599 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details
Memory - MYXXXXX16MP8PB-45/XX - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details