Manufacturer: Alliance Memory, Inc.
Win Source Part Number: 806480-AS6C2016-55ZI
Packaging: Tray
Mounting Style: SMD
Technology: SRAM - Asynchronous
Memory Type: Volatile
Memory Size: 2Mb (128K x 16)
Access Time: 55ns
Supplier Device Package: 44-TSOP II
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: SRAM
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Manufacturer Package: 44-TSOP
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 135
MSL Level: 3 (168 Hours)
Supply Voltage (V): 2.7V ~ 5.5V
ALLIANCE, Asyn SRAM, 2M,128Kx16,2.7-5.5V
ALLIANCE, Asyn SRAM, 2M,128Kx16,2.7-5.5V
ALLIANCE, Asyn SRAM, 2M,128Kx16,2.7-5.5V
IC SRAM 2MBIT PARALLEL 44TSOP II Product overview: AS6C2016-55ZIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS6C2016-55ZIN can be used for catalog matching and distributor lookup.
IC SRAM 2MBIT PARALLEL 44TSOP II
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SRAM - Asynchronous Memory IC 2Mbit Parallel 55 ns 44-TSOP II
IC SRAM 2MBIT PARALLEL 44TSOP II
| Win Source Electronics | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Lingto Electronic Limited | Karl Kruse GmbH & Co. KG | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 806480-AS6C2016-55ZIN | 2308449 | 774-AS6C2016-55ZIN | AS6C2016-55ZIN | AS6C2016-55ZIN | AS6C2016-55ZIN | AS6C2016-55ZIN |
| Product Name | Memory - SRAM - AS6C2016-55ZIN | SRAM | Memory IC and Storage Component | Memory | SRAM 2M, 3.3V, 55ns 128K x 16 Asyn SRAM | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | Volatile; SRAM Chip | SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip | SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Access Time | 55 ns | 55 ns | 55 ns | 55 ns | 55 ns | ||
| Cycle Time | 55 ns | 55 ns | 55 ns | ||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||||
| Supply Voltage | 2.7V ~ 5.5V | 2.7V ~ 5.5V | 2.7V ~ 5.5V | Surface Mount |
