Alliance Memory, Inc. Memory AS6C2016-55BIN

Description
SRAM - Asynchronous Memory IC 2Mb (128K x 16) Parallel 55ns 48-TFBGA (6x8)
Request a Quote Datasheet
Description
SRAM - Asynchronous Memory IC 2Mb (128K x 16) Parallel 55ns 48-TFBGA (6x8)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 1450-1175-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 2Mb (128K x 16) Parallel 55ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 2Mb (128K x 16) Parallel 55ns 48-TFBGA (6x8)

Buy Now Datasheet
Memory IC and Storage Component - 774-AS6C2016-55BIN - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-AS6C2016-55BIN
Memory IC and Storage Component 774-AS6C2016-55BIN
IC SRAM 2MBIT PARALLEL 48TFBGA Product overview: AS6C2016-55BIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS6C2016-55BIN can be used for catalog matching and distributor lookup.

IC SRAM 2MBIT PARALLEL 48TFBGA Product overview: AS6C2016-55BIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS6C2016-55BIN can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
SRAM 2M, 3.3V, 55ns 128K x 16 Asyn SRAM - AS6C2016-55BIN - Karl Kruse GmbH & Co. KG
Kaarst, Germany
SRAM 2M, 3.3V, 55ns 128K x 16 Asyn SRAM
AS6C2016-55BIN
SRAM 2M, 3.3V, 55ns 128K x 16 Asyn SRAM AS6C2016-55BIN
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet
Memory - AS6C2016-55BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 2Mbit Parallel 55 ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 2Mbit Parallel 55 ns 48-TFBGA (6x8)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - AS6C2016-55BIN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
AS6C2016-55BIN
Integrated Circuits (ICs) - Memory - Memory AS6C2016-55BIN
IC SRAM 2MBIT PARALLEL 48TFBGA

IC SRAM 2MBIT PARALLEL 48TFBGA

Supplier's Site
IC SRAM 2MBIT PARALLEL 48TFBGA

IC SRAM 2MBIT PARALLEL 48TFBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Karl Kruse GmbH & Co. KG Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1450-1175-ND 774-AS6C2016-55BIN AS6C2016-55BIN AS6C2016-55BIN AS6C2016-55BIN AS6C2016-55BIN
Product Name Memory Memory IC and Storage Component SRAM 2M, 3.3V, 55ns 128K x 16 Asyn SRAM Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 2000 kbits 2000 kbits 2000 kbits 2000 kbits
Package Type 48-TFBGA BGA; Tray TFBGA48 BGA; 48-TFBGA
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