IC SRAM 2MBIT PARALLEL 48TFBGA Product overview: AS6C2016-55BIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS6C2016-55BIN can be used for catalog matching and distributor lookup.
IC SRAM 2MBIT PARALLEL 48TFBGA
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SRAM - Asynchronous Memory IC 2Mbit Parallel 55 ns 48-TFBGA (6x8)
IC SRAM 2MBIT PARALLEL 48TFBGA
| ERSAELECTRONICS PTE. LTD. | Lingto Electronic Limited | Karl Kruse GmbH & Co. KG | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-AS6C2016-55BIN | AS6C2016-55BIN | AS6C2016-55BIN | AS6C2016-55BIN | AS6C2016-55BIN |
| Product Name | Memory IC and Storage Component | Memory | SRAM 2M, 3.3V, 55ns 128K x 16 Asyn SRAM | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | Volatile; SRAM Chip | SRAM; SRAM Chip | SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Access Time | 55 ns | 55 ns | 55 ns | ||
| Cycle Time | 55 ns | 55 ns | |||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
