Alliance Memory, Inc. Memory AS6C2008-55BIN

Description
IC SRAM 2MBIT PARALLEL 36TFBGA
Datasheet
Description
IC SRAM 2MBIT PARALLEL 36TFBGA
Datasheet

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Company
Product
Description
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IC SRAM 2MBIT PARALLEL 36TFBGA

IC SRAM 2MBIT PARALLEL 36TFBGA

Supplier's Site Datasheet
Memory - AS6C2008-55BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 2Mbit Parallel 55 ns 36-TFBGA (6x8)

SRAM - Asynchronous Memory IC 2Mbit Parallel 55 ns 36-TFBGA (6x8)

Buy Now Datasheet
SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM - AS6C2008-55BIN - Karl Kruse GmbH & Co. KG
Kaarst, Germany
SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM
AS6C2008-55BIN
SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM AS6C2008-55BIN
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - AS6C2008-55BIN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
AS6C2008-55BIN
Integrated Circuits (ICs) - Memory - Memory AS6C2008-55BIN
IC SRAM 2MBIT PARALLEL 36TFBGA

IC SRAM 2MBIT PARALLEL 36TFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Karl Kruse GmbH & Co. KG Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AS6C2008-55BIN AS6C2008-55BIN AS6C2008-55BIN AS6C2008-55BIN
Product Name Memory Memory SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip SRAM Chip Volatile; SRAM Chip
Access Time 55 ns 55 ns
Density 2000 kbits 2000 kbits 2000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F)
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