Alliance Memory, Inc. Integrated Circuits (ICs) - Memory - Memory AS6C2008-55BIN

Description
IC SRAM 2MBIT PARALLEL 36TFBGA
Datasheet
Description
IC SRAM 2MBIT PARALLEL 36TFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - AS6C2008-55BIN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
AS6C2008-55BIN
Integrated Circuits (ICs) - Memory - Memory AS6C2008-55BIN
IC SRAM 2MBIT PARALLEL 36TFBGA

IC SRAM 2MBIT PARALLEL 36TFBGA

Supplier's Site
SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM - AS6C2008-55BIN - Karl Kruse GmbH & Co. KG
Kaarst, Germany
SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM
AS6C2008-55BIN
SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM AS6C2008-55BIN
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet
Memory - AS6C2008-55BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 2Mbit Parallel 55 ns 36-TFBGA (6x8)

SRAM - Asynchronous Memory IC 2Mbit Parallel 55 ns 36-TFBGA (6x8)

Buy Now Datasheet
IC SRAM 2MBIT PARALLEL 36TFBGA

IC SRAM 2MBIT PARALLEL 36TFBGA

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Karl Kruse GmbH & Co. KG Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AS6C2008-55BIN AS6C2008-55BIN AS6C2008-55BIN AS6C2008-55BIN
Product Name Integrated Circuits (ICs) - Memory - Memory SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM Memory Memory
Memory Category Volatile; SRAM Chip SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Cycle Time 55 ns
Density 2000 kbits 2000 kbits 2000 kbits
Supply Voltage Surface Mount 3.6V; 2.7V ~ 3.6V
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