Alliance Memory, Inc. Memory AS6C1616B-55TIN

Description
SRAM - Asynchronous Memory IC 16Mbit Parallel 55 ns 48-TSOP I
Datasheet
Description
SRAM - Asynchronous Memory IC 16Mbit Parallel 55 ns 48-TSOP I
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS6C1616B-55TIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 16Mbit Parallel 55 ns 48-TSOP I

SRAM - Asynchronous Memory IC 16Mbit Parallel 55 ns 48-TSOP I

Buy Now Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS6C1616B-55TIN
Integrated Circuits (ICs) - Memory - Memory AS6C1616B-55TIN
MEMORY

MEMORY

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number AS6C1616B-55TIN AS6C1616B-55TIN
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 55 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 16000 kbits 16000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MYX4DD3K512M64PBG2 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR3
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 4096000 kbits
View Details
SDRAM - 2420770P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details
SN74ACT2227 64 x 1 x 2 dual independent synchronous FIFO memories - SN74ACT2227DW - Texas Instruments
Specs
Memory Category FIFO
Package Type SOIC
View Details
5 suppliers
Memory - 4347153 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers