Alliance Memory, Inc. Memory AS6C1616B-55BINTR

Description
SRAM - Asynchronous Memory IC 16Mbit Parallel 55 ns 48-TFBGA (6x8)
Datasheet
Description
SRAM - Asynchronous Memory IC 16Mbit Parallel 55 ns 48-TFBGA (6x8)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS6C1616B-55BINTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 16Mbit Parallel 55 ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 16Mbit Parallel 55 ns 48-TFBGA (6x8)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - AS6C1616B-55BINTR - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS6C1616B-55BINTR
Integrated Circuits (ICs) - Memory - Memory AS6C1616B-55BINTR
IC SRAM 16MBIT PARALLEL 48TFBGA

IC SRAM 16MBIT PARALLEL 48TFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number AS6C1616B-55BINTR AS6C1616B-55BINTR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 55 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 16000 kbits 16000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory IC and Storage Component - 736-DP8521AV-25 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type Bulk
View Details
2 suppliers
Memory - 71V256S12YG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 256 kbits
View Details
Memory - 2035-200 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
SDRAM - 2420769 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details