Alliance Memory, Inc. Memory AS6C1616B-55BIN

Description
SRAM - Asynchronous Memory IC 16Mbit Parallel 55 ns 48-TFBGA (6x8)
Datasheet
Description
SRAM - Asynchronous Memory IC 16Mbit Parallel 55 ns 48-TFBGA (6x8)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS6C1616B-55BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 16Mbit Parallel 55 ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 16Mbit Parallel 55 ns 48-TFBGA (6x8)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - AS6C1616B-55BIN - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS6C1616B-55BIN
Integrated Circuits (ICs) - Memory - Memory AS6C1616B-55BIN
IC SRAM 16MBIT PARALLEL 48TFBGA

IC SRAM 16MBIT PARALLEL 48TFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number AS6C1616B-55BIN AS6C1616B-55BIN
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 55 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 16000 kbits 16000 kbits
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