Alliance Memory, Inc. Memory AS6C1616-55BIN

Description
SRAM - Asynchronous Memory IC 16Mbit Parallel 55 ns 48-TFBGA (6x8)
Datasheet
Description
SRAM - Asynchronous Memory IC 16Mbit Parallel 55 ns 48-TFBGA (6x8)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS6C1616-55BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 16Mbit Parallel 55 ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 16Mbit Parallel 55 ns 48-TFBGA (6x8)

Buy Now Datasheet
IC SRAM 16MBIT PARALLEL 48TFBGA

IC SRAM 16MBIT PARALLEL 48TFBGA

Supplier's Site Datasheet
DRAM 16M 3V 55ns 1024Kx16 LP Asy SRAM - AS6C1616-55BIN - Karl Kruse GmbH & Co. KG
Kaarst, Germany
DRAM 16M 3V 55ns 1024Kx16 LP Asy SRAM
AS6C1616-55BIN
DRAM 16M 3V 55ns 1024Kx16 LP Asy SRAM AS6C1616-55BIN
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - AS6C1616-55BIN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
AS6C1616-55BIN
Integrated Circuits (ICs) - Memory - Memory AS6C1616-55BIN
IC SRAM 16MBIT PARALLEL 48TFBGA

IC SRAM 16MBIT PARALLEL 48TFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Karl Kruse GmbH & Co. KG Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AS6C1616-55BIN AS6C1616-55BIN AS6C1616-55BIN AS6C1616-55BIN
Product Name Memory Memory DRAM 16M 3V 55ns 1024Kx16 LP Asy SRAM Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip DRAM Chip; SRAM Chip Volatile; SRAM Chip
Access Time 55 ns 55 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 16000 kbits 16000 kbits 16000 kbits
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