Alliance Memory, Inc. Integrated Circuits (ICs) - Memory - Memory AS6C1016-55BIN

Description
IC SRAM 1MBIT PARALLEL 48TFBGA
Datasheet
Description
IC SRAM 1MBIT PARALLEL 48TFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - AS6C1016-55BIN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
AS6C1016-55BIN
Integrated Circuits (ICs) - Memory - Memory AS6C1016-55BIN
IC SRAM 1MBIT PARALLEL 48TFBGA

IC SRAM 1MBIT PARALLEL 48TFBGA

Supplier's Site
IC SRAM 1MBIT PARALLEL 48TFBGA

IC SRAM 1MBIT PARALLEL 48TFBGA

Supplier's Site Datasheet
SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM - AS6C1016-55BIN - Karl Kruse GmbH & Co. KG
Kaarst, Germany
SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM
AS6C1016-55BIN
SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM AS6C1016-55BIN
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet
Memory - AS6C1016-55BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 55 ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 1Mbit Parallel 55 ns 48-TFBGA (6x8)

Buy Now Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Karl Kruse GmbH & Co. KG Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AS6C1016-55BIN AS6C1016-55BIN AS6C1016-55BIN AS6C1016-55BIN
Product Name Integrated Circuits (ICs) - Memory - Memory Memory SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM Memory
Memory Category Volatile; SRAM Chip SRAM; SRAM Chip SRAM Chip SRAM; SRAM Chip
Cycle Time 55 ns
Density 1000 kbits 1000 kbits 1000 kbits
Package Type BGA TFBGA48 BGA; 48-TFBGA
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 1882578 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details
Memory - SMJ27C512 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EPROM; UVEPROM
Access Time 15 to 25 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 043641RLAD-6 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 3 ns
Density 4500 kbits
View Details
Integrated Circuits (ICs) - Memory - Memory - 54F189DLQB - Shenzhen Shengyu Electronics Technology Limited
Specs
Memory Category Volatile
Cycle Time 37.5 ns
Density 0 kbits
View Details
2 suppliers