Alliance Memory, Inc. Memory AS6C1016-55BIN

Description
SRAM - Asynchronous Memory IC 1Mb (64K x 16) Parallel 55ns 48-TFBGA (6x8)
Request a Quote Datasheet
Description
SRAM - Asynchronous Memory IC 1Mb (64K x 16) Parallel 55ns 48-TFBGA (6x8)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 1450-1169-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 1Mb (64K x 16) Parallel 55ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 1Mb (64K x 16) Parallel 55ns 48-TFBGA (6x8)

Buy Now Datasheet
SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM - AS6C1016-55BIN - Karl Kruse GmbH & Co. KG
Kaarst, Germany
SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM
AS6C1016-55BIN
SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM AS6C1016-55BIN
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - AS6C1016-55BIN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
AS6C1016-55BIN
Integrated Circuits (ICs) - Memory - Memory AS6C1016-55BIN
IC SRAM 1MBIT PARALLEL 48TFBGA

IC SRAM 1MBIT PARALLEL 48TFBGA

Supplier's Site
Memory - AS6C1016-55BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 55 ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 1Mbit Parallel 55 ns 48-TFBGA (6x8)

Buy Now Datasheet
IC SRAM 1MBIT PARALLEL 48TFBGA

IC SRAM 1MBIT PARALLEL 48TFBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Karl Kruse GmbH & Co. KG Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1450-1169-ND AS6C1016-55BIN AS6C1016-55BIN AS6C1016-55BIN AS6C1016-55BIN
Product Name Memory SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category SRAM Chip SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1000 kbits 1000 kbits 1000 kbits 1000 kbits
Package Type 48-TFBGA TFBGA48 BGA BGA; 48-TFBGA
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 16-3791-01 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Flash Memory - 1882727P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 2048000 kbits
Package Type WSON
View Details
SN74ACT3632 512 x 36 x 2 bidirectional synchronous FIFO memory - SN74ACT3632-15PQG4 - Texas Instruments
Specs
Memory Category FIFO
Package Type BQFP
View Details
5 suppliers
Memory - 71024S12YG8 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 1000 kbits
View Details