Alliance Memory, Inc. Memory AS6C1016-55BIN

Description
SRAM - Asynchronous Memory IC 1Mb (64K x 16) Parallel 55ns 48-TFBGA (6x8)
Request a Quote Datasheet
Description
SRAM - Asynchronous Memory IC 1Mb (64K x 16) Parallel 55ns 48-TFBGA (6x8)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 1450-1169-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 1Mb (64K x 16) Parallel 55ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 1Mb (64K x 16) Parallel 55ns 48-TFBGA (6x8)

Buy Now Datasheet
SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM - AS6C1016-55BIN - Karl Kruse GmbH & Co. KG
Kaarst, Germany
SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM
AS6C1016-55BIN
SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM AS6C1016-55BIN
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet
Memory - AS6C1016-55BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 55 ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 1Mbit Parallel 55 ns 48-TFBGA (6x8)

Buy Now Datasheet
IC SRAM 1MBIT PARALLEL 48TFBGA

IC SRAM 1MBIT PARALLEL 48TFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - AS6C1016-55BIN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
AS6C1016-55BIN
Integrated Circuits (ICs) - Memory - Memory AS6C1016-55BIN
IC SRAM 1MBIT PARALLEL 48TFBGA

IC SRAM 1MBIT PARALLEL 48TFBGA

Supplier's Site

Technical Specifications

  DigiKey Karl Kruse GmbH & Co. KG Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1450-1169-ND AS6C1016-55BIN AS6C1016-55BIN AS6C1016-55BIN AS6C1016-55BIN
Product Name Memory SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1000 kbits 1000 kbits 1000 kbits 1000 kbits
Package Type 48-TFBGA TFBGA48 BGA; 48-TFBGA BGA
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