Alliance Memory, Inc. Memory AS6C1008-55BINTR

Description
IC SRAM 1MBIT PARALLEL 36TFBGA
Datasheet
Description
IC SRAM 1MBIT PARALLEL 36TFBGA
Datasheet

Suppliers

Company
Product
Description
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IC SRAM 1MBIT PARALLEL 36TFBGA

IC SRAM 1MBIT PARALLEL 36TFBGA

Supplier's Site Datasheet
Memory - AS6C1008-55BINTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 55 ns 36-TFBGA (6x8)

SRAM - Asynchronous Memory IC 1Mbit Parallel 55 ns 36-TFBGA (6x8)

Buy Now Datasheet
SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM - AS6C1008-55BINTR - Karl Kruse GmbH & Co. KG
Kaarst, Germany
SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM
AS6C1008-55BINTR
SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM AS6C1008-55BINTR
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - AS6C1008-55BINTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
AS6C1008-55BINTR
Integrated Circuits (ICs) - Memory - Memory AS6C1008-55BINTR
IC SRAM 1MBIT PARALLEL 36TFBGA

IC SRAM 1MBIT PARALLEL 36TFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Karl Kruse GmbH & Co. KG Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AS6C1008-55BINTR AS6C1008-55BINTR AS6C1008-55BINTR AS6C1008-55BINTR
Product Name Memory Memory SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip SRAM Chip Volatile; SRAM Chip
Access Time 55 ns 55 ns
Density 1000 kbits 1000 kbits 1000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F)
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