SDRAM Memory IC 256Mbit Parallel 143 MHz 5.4 ns 90-TFBGA (8x13)
IC DRAM 256MBIT PARALLEL 90TFBGA
IC DRAM 256MBIT PARALLEL 90TFBGA
| Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | AS4C8M32SA-7BCNTR | AS4C8M32SA-7BCNTR | AS4C8M32SA-7BCNTR |
| Product Name | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 5.4 ns | 5.4 ns | 5.4 ns |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | |
| Density | 256000 kbits | 256000 kbits | 256000 kbits |
