Alliance Memory, Inc. Memory AS4C8M32SA-7BCNTR

Description
SDRAM Memory IC 256Mbit Parallel 143 MHz 5.4 ns 90-TFBGA (8x13)
Datasheet
Description
SDRAM Memory IC 256Mbit Parallel 143 MHz 5.4 ns 90-TFBGA (8x13)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS4C8M32SA-7BCNTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 256Mbit Parallel 143 MHz 5.4 ns 90-TFBGA (8x13)

SDRAM Memory IC 256Mbit Parallel 143 MHz 5.4 ns 90-TFBGA (8x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - AS4C8M32SA-7BCNTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C8M32SA-7BCNTR
Integrated Circuits (ICs) - Memory AS4C8M32SA-7BCNTR
IC DRAM 256MBIT PARALLEL 90TFBGA

IC DRAM 256MBIT PARALLEL 90TFBGA

Supplier's Site
IC DRAM 256MBIT PARALLEL 90TFBGA

IC DRAM 256MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C8M32SA-7BCNTR AS4C8M32SA-7BCNTR AS4C8M32SA-7BCNTR
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 5.4 ns 5.4 ns 5.4 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 256000 kbits 256000 kbits 256000 kbits
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