IC DRAM 256MBIT PAR 90TFBGA Product overview: AS4C8M32SA-7BCN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C8M32SA-7BCN can be used for catalog matching and distributor lookup.
Category: DRAM
Win Source Part Number: 1447279-AS4C8M32SA-7
Manufacturer: Alliance Memory, Inc.
IC DRAM 256MBIT PARALLEL 90TFBGA
IC DRAM 256MBIT PARALLEL 90TFBGA
SDRAM Memory IC 256Mbit Parallel 143 MHz 5.4 ns 90-TFBGA (8x13)
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-AS4C8M32SA-7BCN | 1447279-AS4C8M32SA-7BCN | AS4C8M32SA-7BCN | AS4C8M32SA-7BCN | AS4C8M32SA-7BCN |
| Product Name | Memory IC and Storage Component | DRAM | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | |
| Access Time | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | |
| Cycle Time | 2 ns | ||||
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||
| Address Bus Width | 32 bits |
