Alliance Memory, Inc. Memory AS4C8M32S-6BINTR

Description
SDRAM Memory IC 256Mbit Parallel 166 MHz 5 ns 90-TFBGA (8x13)
Datasheet
Description
SDRAM Memory IC 256Mbit Parallel 166 MHz 5 ns 90-TFBGA (8x13)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS4C8M32S-6BINTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 256Mbit Parallel 166 MHz 5 ns 90-TFBGA (8x13)

SDRAM Memory IC 256Mbit Parallel 166 MHz 5 ns 90-TFBGA (8x13)

Buy Now
Integrated Circuits (ICs) - Memory - AS4C8M32S-6BINTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C8M32S-6BINTR
Integrated Circuits (ICs) - Memory AS4C8M32S-6BINTR
IC DRAM 256MBIT PARALLEL 90TFBGA

IC DRAM 256MBIT PARALLEL 90TFBGA

Supplier's Site
SDRAM,256M,3.3V,166MHz,8M x 32,90 ball LFBGA - AS4C8M32S-6BINTR - Karl Kruse GmbH & Co. KG
Kaarst, Germany
SDRAM,256M,3.3V,166MHz,8M x 32,90 ball LFBGA
AS4C8M32S-6BINTR
SDRAM,256M,3.3V,166MHz,8M x 32,90 ball LFBGA AS4C8M32S-6BINTR
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet
IC DRAM 256MBIT PARALLEL 90TFBGA

IC DRAM 256MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Karl Kruse GmbH & Co. KG Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AS4C8M32S-6BINTR AS4C8M32S-6BINTR AS4C8M32S-6BINTR AS4C8M32S-6BINTR
Product Name Memory Integrated Circuits (ICs) - Memory SDRAM,256M,3.3V,166MHz,8M x 32,90 ball LFBGA Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM Chip DRAM; DRAM Chip
Access Time 5 ns 5 ns 5 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71016S12PHGI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 1000 kbits
View Details
Memory - SMJ416160 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 80 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memories - PSRAM (Pseudostatic RAM) - S27KS0642GABHB020 - S27KS0642GABHB020 - Infineon Technologies AG
Specs
Memory Category SRAM Chip
Access Time 35 ns
Operating Temperature -40 to 105 C (-40 to 221 F)
View Details
6 suppliers