Alliance Memory, Inc. Memory AS4C8M32MSB-6BIN

Description
IC DRAM 256MBIT PARALLEL 90FBGA
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Description
IC DRAM 256MBIT PARALLEL 90FBGA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 1450-AS4C8M32MSB-6BIN-ND - DigiKey
Thief River Falls, MN, United States
IC DRAM 256MBIT PARALLEL 90FBGA

IC DRAM 256MBIT PARALLEL 90FBGA

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Memory - AS4C8M32MSB-6BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 256Mbit Parallel 166 MHz 5.5 ns 90-FBGA (8x13)

SDRAM Memory IC 256Mbit Parallel 166 MHz 5.5 ns 90-FBGA (8x13)

Buy Now Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS4C8M32MSB-6BIN
Integrated Circuits (ICs) - Memory - Memory AS4C8M32MSB-6BIN
IC DRAM 256MBIT PARALLEL 90FBGA

IC DRAM 256MBIT PARALLEL 90FBGA

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 1450-AS4C8M32MSB-6BIN-ND AS4C8M32MSB-6BIN AS4C8M32MSB-6BIN
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits
Package Type 90-VFBGA BGA; 90-VFBGA 5.5 ns
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