Alliance Memory, Inc. Integrated Circuits (ICs) - Memory - Memory AS4C8M32MSB-6BIN

Description
IC DRAM 256MBIT PARALLEL 90FBGA
Datasheet
Description
IC DRAM 256MBIT PARALLEL 90FBGA
Datasheet

Suppliers

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Product
Description
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Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS4C8M32MSB-6BIN
Integrated Circuits (ICs) - Memory - Memory AS4C8M32MSB-6BIN
IC DRAM 256MBIT PARALLEL 90FBGA

IC DRAM 256MBIT PARALLEL 90FBGA

Supplier's Site
Memory - AS4C8M32MSB-6BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 256Mbit Parallel 166 MHz 5.5 ns 90-FBGA (8x13)

SDRAM Memory IC 256Mbit Parallel 166 MHz 5.5 ns 90-FBGA (8x13)

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Technical Specifications

  Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number AS4C8M32MSB-6BIN AS4C8M32MSB-6BIN
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip
Data Rate 166 MHz
Cycle Time 15 ns
Density 256000 kbits 256000 kbits
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