IC DRAM 256MBIT PARALLEL 90FBGA
SDRAM - Mobile Memory IC 256Mbit Parallel 166 MHz 5.5 ns 90-FBGA (8x13)
IC DRAM 256MBIT PARALLEL 90FBGA
| Lingto Electronic Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | AS4C8M32MSA-6BINTR | AS4C8M32MSA-6BINTR | AS4C8M32MSA-6BINTR |
| Product Name | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Access Time | 5.5 ns | 5.5 ns | 5.5 ns |
| Density | 256000 kbits | 256000 kbits | 256000 kbits |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
