Alliance Memory, Inc. DRAM AS4C8M32MD2A-25BPCN

Description
Category: DRAM Win Source Part Number: 1447206-AS4C8M32MD2A -25BPCN Manufacturer: Alliance Memory, Inc.
Request a Quote Datasheet
Description
Category: DRAM Win Source Part Number: 1447206-AS4C8M32MD2A -25BPCN Manufacturer: Alliance Memory, Inc.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
DRAM - 1447206-AS4C8M32MD2A-25BPCN - Win Source Electronics
Laguna Hills, CA, United States
Category: DRAM Win Source Part Number: 1447206-AS4C8M32MD2A -25BPCN Manufacturer: Alliance Memory, Inc.

Category: DRAM
Win Source Part Number: 1447206-AS4C8M32MD2A-25BPCN
Manufacturer: Alliance Memory, Inc.

Buy Now
Integrated Circuits (ICs) - Memory - Memory - AS4C8M32MD2A-25BPCN - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS4C8M32MD2A-25BPCN
Integrated Circuits (ICs) - Memory - Memory AS4C8M32MD2A-25BPCN
IC DRAM 256MBIT PAR 168FBGA

IC DRAM 256MBIT PAR 168FBGA

Supplier's Site
Memory - AS4C8M32MD2A-25BPCN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR2 Memory IC 256Mbit Parallel 400 MHz 18 ns 168-FBGA (12x12)

SDRAM - Mobile LPDDR2 Memory IC 256Mbit Parallel 400 MHz 18 ns 168-FBGA (12x12)

Buy Now Datasheet
IC DRAM 256MBIT PARALLEL 168FBGA

IC DRAM 256MBIT PARALLEL 168FBGA

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics Acme Chip Technology Co., Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1447206-AS4C8M32MD2A-25BPCN AS4C8M32MD2A-25BPCN AS4C8M32MD2A-25BPCN AS4C8M32MD2A-25BPCN
Product Name DRAM Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Density 256000 kbits 256000 kbits 256000 kbits
Package Type -25degC ~ 85degC (TC) BGA; 168-VFBGA
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 043641RLAD-7 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 3.5 ns
Density 4500 kbits
View Details
Memory - JBP28S42MJ - ODG (Origin Data Global)
Texas Instruments
Specs
Memory Category PROM; PROM
Access Time 70 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
3 suppliers
Flash Memory, 4Mbit, 90Ns, 32-Plcc; Flash Memory Type Cypress Infineon Technologies - 04B611 - Newark, An Avnet Company
Specs
Memory Category Flash
Density 4000 kbits
Package Type LCC
View Details
Memory - MYX4DD3K512M64PBG2 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR3
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 4096000 kbits
View Details