Alliance Memory, Inc. Memory AS4C8M32MD2A-25BCNTR

Description
IC DRAM 256MBIT PARALLEL 134FBGA
Request a Quote Datasheet
Description
IC DRAM 256MBIT PARALLEL 134FBGA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 1450-AS4C8M32MD2A-25BCNTR-ND - DigiKey
Thief River Falls, MN, United States
IC DRAM 256MBIT PARALLEL 134FBGA

IC DRAM 256MBIT PARALLEL 134FBGA

Buy Now Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS4C8M32MD2A-25BCNTR
Integrated Circuits (ICs) - Memory - Memory AS4C8M32MD2A-25BCNTR
MEMORY

MEMORY

Supplier's Site
Memory - AS4C8M32MD2A-25BCNTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR2 Memory IC 256Mbit HSUL_12 400 MHz 5.5 ns 134-FBGA (10x11.5)

SDRAM - Mobile LPDDR2 Memory IC 256Mbit HSUL_12 400 MHz 5.5 ns 134-FBGA (10x11.5)

Buy Now Datasheet

Technical Specifications

  DigiKey Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 1450-AS4C8M32MD2A-25BCNTR-ND AS4C8M32MD2A-25BCNTR AS4C8M32MD2A-25BCNTR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits
Package Type 134-TFBGA BGA; 134-FBGA (10x11.5) BGA; 134-TFBGA
Unlock Full Specs
to access all available technical data

Similar Products

Memories - Radiation hardened and high-reliability memories - Space Memories - 5962R1821503VXF - 5962R1821503VXF - Infineon Technologies AG
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 144000 kbits
Number of Words 2 k
View Details
Memory - 27C512-12/L092 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 120 ns
Density 512 kbits
View Details
SDRAM - 1882660P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Density 512000 kbits
View Details
Memory - AS58LC1001 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details