The AS4C8M16SA-7BCNTR is a 128Mbit synchronous DRAM (SDRAM) from Quarktwin Technology Ltd., featuring a 5.4 ns access time and a clock rate of 143 MHz. It is organized as 4 banks of 2M words x 16 bits, supporting fully synchronous operation with an internal pipelined architecture. The device allows for programmable mode registers, enabling configurations for CAS latency (2 or 3), burst lengths (1, 2, 4, 8, or full page), and burst types (sequential or interleaved). The memory operates with a single +3.3V ¬± 0.3V power supply and is available in both 54-pin TSOP II and 54-ball TFBGA packages. It supports an operating temperature range of 0 to 70¬8C for commercial applications and -40 to 85¬8C for industrial applications. The AS4C8M16SA-7BCNTR is ROHS compliant and features auto refresh and self-refresh capabilities, making it suitable for high-performance PC applications requiring high memory bandwidth.
SDRAM Memory IC 128Mb (8M x 16) Parallel 143MHz 5.4ns 54-TFBGA (8x8)
IC DRAM 128MBIT PARALLEL 54TFBGA
IC DRAM 128MBIT PARALLEL 54TFBGA
SDRAM Memory IC 128Mbit Parallel 143 MHz 5.4 ns 54-TFBGA (8x8)
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| DigiKey | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Karl Kruse GmbH & Co. KG | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | AS4C8M16SA-7BCNTR-ND | AS4C8M16SA-7BCNTR | AS4C8M16SA-7BCNTR | AS4C8M16SA-7BCNTR | AS4C8M16SA-7BCNTR |
| Product Name | Memory | Memory | Integrated Circuits (ICs) - Memory | Memory | SDRAM,128M,3.3V,143MHz,8M x 16,54ball TFBGA |
| Memory Category | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM Chip |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||
| Density | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | |
| Package Type | 54-TFBGA | BGA | BGA; 54-TFBGA | 54ball TFBGA |
