Alliance Memory, Inc. Memory AS4C8M16SA-7BCNTR

Description
SDRAM Memory IC 128Mb (8M x 16) Parallel 143MHz 5.4ns 54-TFBGA (8x8)
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Description
SDRAM Memory IC 128Mb (8M x 16) Parallel 143MHz 5.4ns 54-TFBGA (8x8)
Request a Quote
Datasheet
Datasheet Summary
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The AS4C8M16SA-7BCNTR is a 128Mbit synchronous DRAM (SDRAM) from Quarktwin Technology Ltd., featuring a 5.4 ns access time and a clock rate of 143 MHz. It is organized as 4 banks of 2M words x 16 bits, supporting fully synchronous operation with an internal pipelined architecture. The device allows for programmable mode registers, enabling configurations for CAS latency (2 or 3), burst lengths (1, 2, 4, 8, or full page), and burst types (sequential or interleaved). The memory operates with a single +3.3V ¬± 0.3V power supply and is available in both 54-pin TSOP II and 54-ball TFBGA packages. It supports an operating temperature range of 0 to 70¬8C for commercial applications and -40 to 85¬8C for industrial applications. The AS4C8M16SA-7BCNTR is ROHS compliant and features auto refresh and self-refresh capabilities, making it suitable for high-performance PC applications requiring high memory bandwidth.

Datasheet Summary
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The AS4C8M16SA-7BCNTR is a 128Mbit synchronous DRAM (SDRAM) from Quarktwin Technology Ltd., featuring a 5.4 ns access time and a clock rate of 143 MHz. It is organized as 4 banks of 2M words x 16 bits, supporting fully synchronous operation with an internal pipelined architecture. The device allows for programmable mode registers, enabling configurations for CAS latency (2 or 3), burst lengths (1, 2, 4, 8, or full page), and burst types (sequential or interleaved). The memory operates with a single +3.3V ¬± 0.3V power supply and is available in both 54-pin TSOP II and 54-ball TFBGA packages. It supports an operating temperature range of 0 to 70¬8C for commercial applications and -40 to 85¬8C for industrial applications. The AS4C8M16SA-7BCNTR is ROHS compliant and features auto refresh and self-refresh capabilities, making it suitable for high-performance PC applications requiring high memory bandwidth.

Suppliers

Company
Product
Description
Supplier Links
Memory - AS4C8M16SA-7BCNTR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 128Mb (8M x 16) Parallel 143MHz 5.4ns 54-TFBGA (8x8)

SDRAM Memory IC 128Mb (8M x 16) Parallel 143MHz 5.4ns 54-TFBGA (8x8)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - AS4C8M16SA-7BCNTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C8M16SA-7BCNTR
Integrated Circuits (ICs) - Memory AS4C8M16SA-7BCNTR
IC DRAM 128MBIT PARALLEL 54TFBGA

IC DRAM 128MBIT PARALLEL 54TFBGA

Supplier's Site
SDRAM,128M,3.3V,143MHz,8M x 16,54ball TFBGA - AS4C8M16SA-7BCNTR - Karl Kruse GmbH & Co. KG
Kaarst, Germany
SDRAM,128M,3.3V,143MHz,8M x 16,54ball TFBGA
AS4C8M16SA-7BCNTR
SDRAM,128M,3.3V,143MHz,8M x 16,54ball TFBGA AS4C8M16SA-7BCNTR
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet
Memory - AS4C8M16SA-7BCNTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 128Mbit Parallel 143 MHz 5.4 ns 54-TFBGA (8x8)

SDRAM Memory IC 128Mbit Parallel 143 MHz 5.4 ns 54-TFBGA (8x8)

Buy Now Datasheet
IC DRAM 128MBIT PARALLEL 54TFBGA

IC DRAM 128MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Karl Kruse GmbH & Co. KG Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AS4C8M16SA-7BCNTR-ND AS4C8M16SA-7BCNTR AS4C8M16SA-7BCNTR AS4C8M16SA-7BCNTR AS4C8M16SA-7BCNTR
Product Name Memory Integrated Circuits (ICs) - Memory SDRAM,128M,3.3V,143MHz,8M x 16,54ball TFBGA Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 128000 kbits 128000 kbits 128000 kbits 128000 kbits
Package Type 54-TFBGA BGA 54ball TFBGA BGA; 54-TFBGA
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