IC DRAM 128MBIT PAR 54TSOP II Product overview: AS4C8M16SA-6TINTR from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C8M16SA-6TINT
Manufacturer: Alliance Memory, Inc.
Category: Integrated Circuits (ICs) Memory Memory
Package: Tape & Reel (TR)
Product Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
SDRAM Memory IC 128Mb (8M x 16) Parallel 166MHz 5ns 54-TSOP II
IC DRAM 128MBIT PAR 54TSOP II
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SDRAM Memory IC 128Mbit Parallel 166 MHz 5 ns 54-TSOP II
IC DRAM 128MBIT PAR 54TSOP II
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Karl Kruse GmbH & Co. KG | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-AS4C8M16SA-6TINTR | AS4C8M16SA-6TINTR-ND | AS4C8M16SA-6TINTR | AS4C8M16SA-6TINTR | AS4C8M16SA-6TINTR | AS4C8M16SA-6TINTR | |
| Product Name | Memory IC and Storage Component | Integrated Circuits (ICs) Memory Memory | Memory | Integrated Circuits (ICs) - Memory | SDRAM,128M,3.3V,166Mhz,8M x 16,54pin TSOP II | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 5 ns | 5 ns | 5 ns | 5 ns | |||
| Cycle Time | 12 ns | ||||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |||
| Address Bus Width | 16 bits |
