IC DRAM 128MBIT PARALLEL 54TFBGA
SDRAM Memory IC 128Mb (8M x 16) Parallel 166MHz 5ns 54-TFBGA (8x8)
SDRAM Memory IC 128Mb (8M x 16) Parallel 166MHz 5ns 54-TFBGA (8x8)
SDRAM Memory IC 128Mb (8M x 16) Parallel 166MHz 5ns 54-TFBGA (8x8)
IC DRAM 128MBIT PAR 54TFBGA Product overview: AS4C8M16SA-6BINTR from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C8M16SA-6BINT
SDRAM Memory IC 128Mbit Parallel 166 MHz 5 ns 54-TFBGA (8x8)
IC DRAM 128MBIT PARALLEL 54TFBGA
IC DRAM 128MBIT PARALLEL 54TFBGA
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Karl Kruse GmbH & Co. KG | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | AS4C8M16SA-6BINTR | 1450-AS4C8M16SA-6BINCT-ND | 774-AS4C8M16SA-6BINTR | AS4C8M16SA-6BINTR | AS4C8M16SA-6BINTR | AS4C8M16SA-6BINTR | AS4C8M16SA-6BINTR |
| Product Name | Memory | Memory | Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory | Memory | SDRAM,128M,3.3V,166Mhz,8M x 16,54ball TFBGA |
| Memory Category | SDRAM; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM Chip |
| Data Rate | 166 MHz | 166 MHz | |||||
| Access Time | 5 ns | 5 ns | 5 ns | 5 ns | 5 ns | ||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits |
