The AS4C8M16SA-6BIN is a 128Mbit synchronous DRAM (SDRAM) memory chip from Quarktwin Technology Ltd., designed for high-speed applications. It features a fast access time of 5 ns and operates at a clock rate of 166 MHz. The device is organized as 4 banks of 2M words x 16 bits, supporting fully synchronous operation with an internal pipelined architecture. This memory chip offers programmable mode registers, allowing for configurable CAS latency of 2 or 3, and burst lengths of 1, 2, 4, 8, or full page, with options for sequential or interleaved burst types. It operates within a temperature range suitable for commercial (0 to 70¬8C) and industrial (-40 to 85¬8C) applications. The AS4C8M16SA-6BIN requires a single +3.3V ¬± 0.3V power supply and is housed in a 54-ball TFBGA package, making it compact and suitable for various high-performance PC applications. The device is also ROHS compliant, ensuring it meets environmental standards.
IC DRAM 128MBIT PARALLEL 54TFBGA
IC DRAM 128MBIT PAR 54TFBGA Product overview: AS4C8M16SA-6BIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C8M16SA-6BIN can be used for catalog matching and distributor lookup.
SDRAM Memory IC 128Mb (8M x 16) Parallel 166MHz 5ns 54-TFBGA (8x8)
IC DRAM 128MBIT PARALLEL 54TFBGA
IC DRAM 128MBIT PARALLEL 54TFBGA
SDRAM Memory IC 128Mbit Parallel 166 MHz 5 ns 54-TFBGA (8x8)
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| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | Karl Kruse GmbH & Co. KG | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | AS4C8M16SA-6BIN | 774-AS4C8M16SA-6BIN | 1450-1264-ND | AS4C8M16SA-6BIN | AS4C8M16SA-6BIN | AS4C8M16SA-6BIN | AS4C8M16SA-6BIN |
| Product Name | Memory | Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory | Memory | Memory | SDRAM,128M,3.3V,166Mhz,8M x 16,54ball TFBGA |
| Memory Category | SDRAM; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | DRAM Chip |
| Data Rate | 166 MHz | 166 MHz | |||||
| Access Time | 5 ns | 5 ns | 5 ns | 5 ns | 5 ns | ||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits |
