Alliance Memory, Inc. Memory AS4C8M16SA-6BIN

Description
IC DRAM 128MBIT PARALLEL 54TFBGA
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Description
IC DRAM 128MBIT PARALLEL 54TFBGA
Request a Quote
Datasheet
Datasheet Summary
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The AS4C8M16SA-6BIN is a 128Mbit synchronous DRAM (SDRAM) memory chip from Quarktwin Technology Ltd., designed for high-speed applications. It features a fast access time of 5 ns and operates at a clock rate of 166 MHz. The device is organized as 4 banks of 2M words x 16 bits, supporting fully synchronous operation with an internal pipelined architecture. This memory chip offers programmable mode registers, allowing for configurable CAS latency of 2 or 3, and burst lengths of 1, 2, 4, 8, or full page, with options for sequential or interleaved burst types. It operates within a temperature range suitable for commercial (0 to 70¬8C) and industrial (-40 to 85¬8C) applications. The AS4C8M16SA-6BIN requires a single +3.3V ¬± 0.3V power supply and is housed in a 54-ball TFBGA package, making it compact and suitable for various high-performance PC applications. The device is also ROHS compliant, ensuring it meets environmental standards.

Datasheet Summary
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The AS4C8M16SA-6BIN is a 128Mbit synchronous DRAM (SDRAM) memory chip from Quarktwin Technology Ltd., designed for high-speed applications. It features a fast access time of 5 ns and operates at a clock rate of 166 MHz. The device is organized as 4 banks of 2M words x 16 bits, supporting fully synchronous operation with an internal pipelined architecture. This memory chip offers programmable mode registers, allowing for configurable CAS latency of 2 or 3, and burst lengths of 1, 2, 4, 8, or full page, with options for sequential or interleaved burst types. It operates within a temperature range suitable for commercial (0 to 70¬8C) and industrial (-40 to 85¬8C) applications. The AS4C8M16SA-6BIN requires a single +3.3V ¬± 0.3V power supply and is housed in a 54-ball TFBGA package, making it compact and suitable for various high-performance PC applications. The device is also ROHS compliant, ensuring it meets environmental standards.

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 128MBIT PARALLEL 54TFBGA

IC DRAM 128MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet
Memory - 1450-1264-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 128Mb (8M x 16) Parallel 166MHz 5ns 54-TFBGA (8x8)

SDRAM Memory IC 128Mb (8M x 16) Parallel 166MHz 5ns 54-TFBGA (8x8)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - AS4C8M16SA-6BIN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C8M16SA-6BIN
Integrated Circuits (ICs) - Memory AS4C8M16SA-6BIN
IC DRAM 128MBIT PARALLEL 54TFBGA

IC DRAM 128MBIT PARALLEL 54TFBGA

Supplier's Site
SDRAM,128M,3.3V,166Mhz,8M x 16,54ball TFBGA - AS4C8M16SA-6BIN - Karl Kruse GmbH & Co. KG
Kaarst, Germany
SDRAM,128M,3.3V,166Mhz,8M x 16,54ball TFBGA
AS4C8M16SA-6BIN
SDRAM,128M,3.3V,166Mhz,8M x 16,54ball TFBGA AS4C8M16SA-6BIN
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet
Memory - AS4C8M16SA-6BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 128Mbit Parallel 166 MHz 5 ns 54-TFBGA (8x8)

SDRAM Memory IC 128Mbit Parallel 166 MHz 5 ns 54-TFBGA (8x8)

Buy Now Datasheet
IC DRAM 128MBIT PARALLEL 54TFBGA

IC DRAM 128MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Karl Kruse GmbH & Co. KG Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AS4C8M16SA-6BIN 1450-1264-ND AS4C8M16SA-6BIN AS4C8M16SA-6BIN AS4C8M16SA-6BIN AS4C8M16SA-6BIN
Product Name Memory Memory Integrated Circuits (ICs) - Memory SDRAM,128M,3.3V,166Mhz,8M x 16,54ball TFBGA Memory Memory
Memory Category SDRAM; DRAM Chip DRAM Chip Volatile; DRAM Chip DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 166 MHz 166 MHz
Access Time 5 ns 5 ns 5 ns 5 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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