The AS4C8M16SA-6BIN is a 128Mbit synchronous DRAM (SDRAM) memory chip from Quarktwin Technology Ltd., designed for high-speed applications. It features a fast access time of 5 ns and operates at a clock rate of 166 MHz. The device is organized as 4 banks of 2M words x 16 bits, supporting fully synchronous operation with an internal pipelined architecture. This memory chip offers programmable mode registers, allowing for configurable CAS latency of 2 or 3, and burst lengths of 1, 2, 4, 8, or full page, with options for sequential or interleaved burst types. It operates within a temperature range suitable for commercial (0 to 70¬8C) and industrial (-40 to 85¬8C) applications. The AS4C8M16SA-6BIN requires a single +3.3V ¬± 0.3V power supply and is housed in a 54-ball TFBGA package, making it compact and suitable for various high-performance PC applications. The device is also ROHS compliant, ensuring it meets environmental standards.
SDRAM Memory IC 128Mb (8M x 16) Parallel 166MHz 5ns 54-TFBGA (8x8)
IC DRAM 128MBIT PARALLEL 54TFBGA
SDRAM Memory IC 128Mbit Parallel 166 MHz 5 ns 54-TFBGA (8x8)
IC DRAM 128MBIT PARALLEL 54TFBGA
IC DRAM 128MBIT PARALLEL 54TFBGA
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
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| DigiKey | ODG (Origin Data Global) | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Karl Kruse GmbH & Co. KG | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 1450-1264-ND | AS4C8M16SA-6BIN | AS4C8M16SA-6BIN | AS4C8M16SA-6BIN | AS4C8M16SA-6BIN | AS4C8M16SA-6BIN |
| Product Name | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory | Memory | SDRAM,128M,3.3V,166Mhz,8M x 16,54ball TFBGA |
| Memory Category | DRAM Chip | SDRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | |
| Package Type | 54-TFBGA | 54-TFBGA | BGA; 54-TFBGA | BGA | 54ball TFBGA |
