Win Source Part Number: 980757-AS4C8M16S-6TI
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 108
Mounting: SMD (SMT)
Technology: SDRAM
Memory Type: Volatile
Memory Size: 128Mb (8M x 16)
Access Time: 5 ns
Voltage - Supply: 3V ~ 3.6V
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: DRAM
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 2ns
Memory Interface: Parallel
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0002
Mfr: Alliance Memory, Inc.
Other Names: 1450-1013
Product Status: Obsolete
IC DRAM 128MBIT PAR 54TSOP II
SDRAM Memory IC 128Mbit Parallel 166 MHz 5 ns 54-TSOP II
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.
IC DRAM 128MBIT PAR 54TSOP II
| Win Source Electronics | Lingto Electronic Limited | Quarktwin Technology Ltd. | Karl Kruse GmbH & Co. KG | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 980757-AS4C8M16S-6TIN | AS4C8M16S-6TIN | AS4C8M16S-6TIN | AS4C8M16S-6TIN | AS4C8M16S-6TIN |
| Product Name | Integrated Circuits (ICs) - Memory | Memory | Memory | SDRAM,128M,3.3V,166Mhz,8M x 16,54pin TSOP II | Integrated Circuits (ICs) - Memory |
| Memory Category | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | Volatile; DRAM Chip |
| Access Time | 5 ns | 5 ns | 5 ns | 5 ns | |
| Cycle Time | 2 ns | ||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
