Alliance Memory, Inc. Memory AS4C8M16S-6TANTR

Description
IC DRAM 128MBIT PAR 54TSOP II
Datasheet
Description
IC DRAM 128MBIT PAR 54TSOP II
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 128MBIT PAR 54TSOP II

IC DRAM 128MBIT PAR 54TSOP II

Supplier's Site Datasheet
Memory - AS4C8M16S-6TANTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 128Mbit Parallel 166 MHz 5 ns 54-TSOP II

SDRAM Memory IC 128Mbit Parallel 166 MHz 5 ns 54-TSOP II

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - AS4C8M16S-6TANTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
AS4C8M16S-6TANTR
Integrated Circuits (ICs) - Memory - Memory AS4C8M16S-6TANTR
IC DRAM 128MBIT PAR 54TSOP II

IC DRAM 128MBIT PAR 54TSOP II

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C8M16S-6TANTR AS4C8M16S-6TANTR AS4C8M16S-6TANTR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 5 ns 5 ns
Density 128000 kbits 128000 kbits 128000 kbits
Operating Temperature -40 to 105 C (-40 to 221 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 5962-8670302FA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category PROM; PROM
Access Time 35 ns
Density 0 kbits
View Details
Memory - 9338PCQR - Quarktwin Technology Ltd.
Texas Instruments
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type DIP; 16-DIP (0.300\", 7.62mm)
Supply Voltage 4.75V ~ 5.25V
View Details
Memory - A2C00045089 A - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Flash Memory - 1882540 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details