Alliance Memory, Inc. Memory AS4C8M16S-6TAN

Description
SDRAM Memory IC 128Mbit Parallel 166 MHz 5 ns 54-TSOP II
Datasheet
Description
SDRAM Memory IC 128Mbit Parallel 166 MHz 5 ns 54-TSOP II
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS4C8M16S-6TAN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 128Mbit Parallel 166 MHz 5 ns 54-TSOP II

SDRAM Memory IC 128Mbit Parallel 166 MHz 5 ns 54-TSOP II

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - AS4C8M16S-6TAN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C8M16S-6TAN
Integrated Circuits (ICs) - Memory AS4C8M16S-6TAN
IC DRAM 128MBIT PAR 54TSOP II

IC DRAM 128MBIT PAR 54TSOP II

Supplier's Site
IC DRAM 128MBIT PAR 54TSOP II

IC DRAM 128MBIT PAR 54TSOP II

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C8M16S-6TAN AS4C8M16S-6TAN AS4C8M16S-6TAN
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 5 ns 5 ns 5 ns
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Density 128000 kbits 128000 kbits 128000 kbits
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