Alliance Memory, Inc. Integrated Circuits (ICs) Memory Memory AS4C8M16S-6BIN

Description
Alternative Parts (Cross-Reference): Cross Manufacturer: Alliance Memory, Inc. Category: Integrated Circuits (ICs) Memory Memory Package: Tray Product Status: Obsolete Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mbit Memory Organization: 8M x 16
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Description
Alternative Parts (Cross-Reference): Cross Manufacturer: Alliance Memory, Inc. Category: Integrated Circuits (ICs) Memory Memory Package: Tray Product Status: Obsolete Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mbit Memory Organization: 8M x 16
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) Memory Memory -  - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) Memory Memory
Integrated Circuits (ICs) Memory Memory
Alternative Parts (Cross-Reference): Cross Manufacturer: Alliance Memory, Inc. Category: Integrated Circuits (ICs) Memory Memory Package: Tray Product Status: Obsolete Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mbit Memory Organization: 8M x 16

Alternative Parts (Cross-Reference): Cross
Manufacturer: Alliance Memory, Inc.
Category: Integrated Circuits (ICs) Memory Memory
Package: Tray
Product Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mbit
Memory Organization: 8M x 16

Buy Now Datasheet
Memory IC and Storage Component - 774-AS4C8M16S-6BIN - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-AS4C8M16S-6BIN
Memory IC and Storage Component 774-AS4C8M16S-6BIN
IC DRAM 128MBIT PAR 54TFBGA Product overview: AS4C8M16S-6BIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C8M16S-6BIN can be used for catalog matching and distributor lookup.

IC DRAM 128MBIT PAR 54TFBGA Product overview: AS4C8M16S-6BIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C8M16S-6BIN can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
SDRAM,128M,3.3V,166Mhz,8M x 16,54ball TFBGA - AS4C8M16S-6BIN - Karl Kruse GmbH & Co. KG
Kaarst, Germany
SDRAM,128M,3.3V,166Mhz,8M x 16,54ball TFBGA
AS4C8M16S-6BIN
SDRAM,128M,3.3V,166Mhz,8M x 16,54ball TFBGA AS4C8M16S-6BIN
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet
IC DRAM 128MBIT PARALLEL 54TFBGA

IC DRAM 128MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet
Memory - AS4C8M16S-6BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 128Mbit Parallel 166 MHz 5 ns 54-TFBGA (8x8)

SDRAM Memory IC 128Mbit Parallel 166 MHz 5 ns 54-TFBGA (8x8)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - AS4C8M16S-6BIN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C8M16S-6BIN
Integrated Circuits (ICs) - Memory AS4C8M16S-6BIN
IC DRAM 128MBIT PARALLEL 54TFBGA

IC DRAM 128MBIT PARALLEL 54TFBGA

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Karl Kruse GmbH & Co. KG Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-AS4C8M16S-6BIN AS4C8M16S-6BIN AS4C8M16S-6BIN AS4C8M16S-6BIN AS4C8M16S-6BIN
Product Name Integrated Circuits (ICs) Memory Memory Memory IC and Storage Component SDRAM,128M,3.3V,166Mhz,8M x 16,54ball TFBGA Memory Memory Integrated Circuits (ICs) - Memory
Memory Category Volatile; DRAM Chip Volatile; DRAM Chip DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 5 ns 5 ns 5 ns 5 ns
Cycle Time 2 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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