Alliance Memory, Inc. Memory AS4C64M32MD1A-5BIN

Description
IC DRAM 2GBIT PARALLEL 90FBGA
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Description
IC DRAM 2GBIT PARALLEL 90FBGA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 1450-AS4C64M32MD1A-5BIN-ND - DigiKey
Thief River Falls, MN, United States
IC DRAM 2GBIT PARALLEL 90FBGA

IC DRAM 2GBIT PARALLEL 90FBGA

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Memory - AS4C64M32MD1A-5BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 2Gbit Parallel 200 MHz 5 ns 90-FBGA (8x13)

SDRAM - Mobile LPDDR Memory IC 2Gbit Parallel 200 MHz 5 ns 90-FBGA (8x13)

Buy Now Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS4C64M32MD1A-5BIN
Integrated Circuits (ICs) - Memory - Memory AS4C64M32MD1A-5BIN
IC DRAM 2GBIT PARALLEL 90FBGA

IC DRAM 2GBIT PARALLEL 90FBGA

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 1450-AS4C64M32MD1A-5BIN-ND AS4C64M32MD1A-5BIN AS4C64M32MD1A-5BIN
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type 90-VFBGA BGA; 90-VFBGA BGA; 90-FBGA (8x13)
Supply Voltage 1.7V ~ 1.95V 1.7V ~ 1.95V -40degC ~ 85degC (TC)
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