Alliance Memory, Inc. Memory AS4C64M16MD1A-5BIN

Description
IC DRAM 1GBIT PARALLEL 60FBGA
Datasheet
Description
IC DRAM 1GBIT PARALLEL 60FBGA
Datasheet

Suppliers

Company
Product
Description
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IC DRAM 1GBIT PARALLEL 60FBGA

IC DRAM 1GBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AS4C64M16MD1A-5BIN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C64M16MD1A-5BIN
Integrated Circuits (ICs) - Memory AS4C64M16MD1A-5BIN
IC DRAM 1GBIT PARALLEL 60FBGA

IC DRAM 1GBIT PARALLEL 60FBGA

Supplier's Site
Memory - AS4C64M16MD1A-5BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 1Gbit Parallel 200 MHz 5 ns 60-FBGA (8x9)

SDRAM - Mobile LPDDR Memory IC 1Gbit Parallel 200 MHz 5 ns 60-FBGA (8x9)

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Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C64M16MD1A-5BIN AS4C64M16MD1A-5BIN AS4C64M16MD1A-5BIN
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 5 ns 5 ns 5 ns
Density 1000000 kbits 1000000 kbits 1000000 kbits
Data Rate 200 MHz
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