Alliance Memory, Inc. Memory AS4C64M16MD1A-5BIN

Description
SDRAM - Mobile LPDDR Memory IC 1Gbit Parallel 200 MHz 5 ns 60-FBGA (8x9)
Datasheet
Description
SDRAM - Mobile LPDDR Memory IC 1Gbit Parallel 200 MHz 5 ns 60-FBGA (8x9)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS4C64M16MD1A-5BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 1Gbit Parallel 200 MHz 5 ns 60-FBGA (8x9)

SDRAM - Mobile LPDDR Memory IC 1Gbit Parallel 200 MHz 5 ns 60-FBGA (8x9)

Buy Now Datasheet
IC DRAM 1GBIT PARALLEL 60FBGA

IC DRAM 1GBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AS4C64M16MD1A-5BIN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C64M16MD1A-5BIN
Integrated Circuits (ICs) - Memory AS4C64M16MD1A-5BIN
IC DRAM 1GBIT PARALLEL 60FBGA

IC DRAM 1GBIT PARALLEL 60FBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C64M16MD1A-5BIN AS4C64M16MD1A-5BIN AS4C64M16MD1A-5BIN
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 5 ns 5 ns 5 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1000000 kbits 1000000 kbits 1000000 kbits
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