Alliance Memory, Inc. Integrated Circuits (ICs) - Memory AS4C64M16MD1A-5BIN

Description
IC DRAM 1GBIT PARALLEL 60FBGA
Datasheet
Description
IC DRAM 1GBIT PARALLEL 60FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - AS4C64M16MD1A-5BIN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C64M16MD1A-5BIN
Integrated Circuits (ICs) - Memory AS4C64M16MD1A-5BIN
IC DRAM 1GBIT PARALLEL 60FBGA

IC DRAM 1GBIT PARALLEL 60FBGA

Supplier's Site
IC DRAM 1GBIT PARALLEL 60FBGA

IC DRAM 1GBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Memory - AS4C64M16MD1A-5BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 1Gbit Parallel 200 MHz 5 ns 60-FBGA (8x9)

SDRAM - Mobile LPDDR Memory IC 1Gbit Parallel 200 MHz 5 ns 60-FBGA (8x9)

Buy Now Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C64M16MD1A-5BIN AS4C64M16MD1A-5BIN AS4C64M16MD1A-5BIN
Product Name Integrated Circuits (ICs) - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 200 MHz
Access Time 5 ns 5 ns 5 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Controllers - DP8422ATVX-25 - Quarktwin Technology Ltd.
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type 84-LCC (J-Lead)
Supply Voltage 4.5V ~ 5.5V
View Details
2 suppliers
SDRAM - 2420773P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details
5V Memory IC and Storage Component - 774-AS27C256-20JM - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category SRAM Chip
Access Time 200 ns
Operating Temperature -55 C (-67 F)
View Details
2 suppliers