Alliance Memory, Inc. Integrated Circuits (ICs) - Memory AS4C64M16MD1-5BIN

Description
IC DRAM 1GBIT PARALLEL 60FBGA
Datasheet
Description
IC DRAM 1GBIT PARALLEL 60FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - AS4C64M16MD1-5BIN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C64M16MD1-5BIN
Integrated Circuits (ICs) - Memory AS4C64M16MD1-5BIN
IC DRAM 1GBIT PARALLEL 60FBGA

IC DRAM 1GBIT PARALLEL 60FBGA

Supplier's Site
IC DRAM 1GBIT PARALLEL 60FBGA

IC DRAM 1GBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Memory - AS4C64M16MD1-5BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 1Gbit Parallel 200 MHz 5 ns 60-FBGA (8x10)

SDRAM - Mobile LPDDR Memory IC 1Gbit Parallel 200 MHz 5 ns 60-FBGA (8x10)

Buy Now Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C64M16MD1-5BIN AS4C64M16MD1-5BIN AS4C64M16MD1-5BIN
Product Name Integrated Circuits (ICs) - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 200 MHz
Access Time 5 ns 5 ns 5 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 00002331896 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
Memory - Memory - Controllers - BQ2201SN-NTR - 140597-BQ2201SN-NTR - Win Source Electronics
Specs
Memory Category SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type SOIC; 8-SOIC
View Details
5 suppliers
SDRAM - 1882676 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details