Alliance Memory, Inc. DRAM AS4C64M16D3B-12BINTR

Description
Category: DRAM Win Source Part Number: 1446595-AS4C64M16D3B -12BINTR Manufacturer: Alliance Memory, Inc.
  • DRAM - 1446595-AS4C64M16D3B-12BINTR - Win Source Electronics
    Win Source Electronics
  • Memory - AS4C64M16D3B-12BINTR-ND - DigiKey
    DigiKey
  • Memory IC and Storage Component - 774-AS4C64M16D3B-12BINTR - ERSAELECTRONICS PTE. LTD.
    ERSAELECTRONICS PTE. LTD.
  • Integrated Circuits (ICs) - Memory - AS4C64M16D3B-12BINTR - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Memory - AS4C64M16D3B-12BINTR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - AS4C64M16D3B-12BINTR - Lingto Electronic Limited
    Lingto Electronic Limited
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Description
Category: DRAM Win Source Part Number: 1446595-AS4C64M16D3B -12BINTR Manufacturer: Alliance Memory, Inc.
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Datasheet
Datasheet Summary
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The AS4C64M16D3B-12BINTR is a 1Gb DDR3 Synchronous DRAM (SDRAM) from Quarktwin Technology Ltd., designed for high-speed operation with a double data rate architecture. It features a 64M x 16 bit organization and operates at a maximum clock frequency of 800 MHz, achieving data transfer rates of up to 1600 Mb/sec per pin. The device is compliant with JEDEC standards and operates with a power supply of 1.5V ± 0.075V. This memory chip is available in a 96-ball FBGA package, measuring 9 x 13 x 1.2 mm, and supports both commercial (0°C to 95°C) and industrial (-40°C to 95°C) temperature ranges. It includes features such as fully synchronous operation, programmable burst lengths, and dynamic on-die termination. The device also supports auto refresh and self-refresh modes, making it suitable for a variety of applications requiring reliable memory performance.

Datasheet Summary
Powered by GS/AI

The AS4C64M16D3B-12BINTR is a 1Gb DDR3 Synchronous DRAM (SDRAM) from Quarktwin Technology Ltd., designed for high-speed operation with a double data rate architecture. It features a 64M x 16 bit organization and operates at a maximum clock frequency of 800 MHz, achieving data transfer rates of up to 1600 Mb/sec per pin. The device is compliant with JEDEC standards and operates with a power supply of 1.5V ± 0.075V. This memory chip is available in a 96-ball FBGA package, measuring 9 x 13 x 1.2 mm, and supports both commercial (0°C to 95°C) and industrial (-40°C to 95°C) temperature ranges. It includes features such as fully synchronous operation, programmable burst lengths, and dynamic on-die termination. The device also supports auto refresh and self-refresh modes, making it suitable for a variety of applications requiring reliable memory performance.

Suppliers

Company
Product
Description
Supplier Links
DRAM - 1446595-AS4C64M16D3B-12BINTR - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
DRAM
1446595-AS4C64M16D3B-12BINTR
DRAM 1446595-AS4C64M16D3B-12BINTR
Category: DRAM Win Source Part Number: 1446595-AS4C64M16D3B -12BINTR Manufacturer: Alliance Memory, Inc.

Category: DRAM
Win Source Part Number: 1446595-AS4C64M16D3B-12BINTR
Manufacturer: Alliance Memory, Inc.

Buy Now
Memory - AS4C64M16D3B-12BINTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Memory
AS4C64M16D3B-12BINTR-ND
Memory AS4C64M16D3B-12BINTR-ND
SDRAM - DDR3 Memory IC 1Gb (64M x 16) Parallel 800MHz 20ns 96-FBGA (9x13)

SDRAM - DDR3 Memory IC 1Gb (64M x 16) Parallel 800MHz 20ns 96-FBGA (9x13)

Buy Now Datasheet
Memory IC and Storage Component - 774-AS4C64M16D3B-12BINTR - ERSAELECTRONICS PTE. LTD.
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-AS4C64M16D3B-12BINTR
Memory IC and Storage Component 774-AS4C64M16D3B-12BINTR
IC DRAM 1GBIT PARALLEL 96FBGA Product overview: AS4C64M16D3B-12BINTR from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C64M16D3B-12B INTR can be used for catalog matching and distributor lookup.

IC DRAM 1GBIT PARALLEL 96FBGA Product overview: AS4C64M16D3B-12BINTR from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C64M16D3B-12BINTR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AS4C64M16D3B-12BINTR - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C64M16D3B-12BINTR
Integrated Circuits (ICs) - Memory AS4C64M16D3B-12BINTR
IC DRAM 1GBIT PARALLEL 96FBGA

IC DRAM 1GBIT PARALLEL 96FBGA

Supplier's Site
Memory - AS4C64M16D3B-12BINTR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
AS4C64M16D3B-12BINTR
Memory AS4C64M16D3B-12BINTR
SDRAM - DDR3 Memory IC 1Gbit Parallel 800 MHz 20 ns 96-FBGA (9x13)

SDRAM - DDR3 Memory IC 1Gbit Parallel 800 MHz 20 ns 96-FBGA (9x13)

Buy Now Datasheet
Memory - AS4C64M16D3B-12BINTR - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
AS4C64M16D3B-12BINTR
Memory AS4C64M16D3B-12BINTR
IC DRAM 1GBIT PARALLEL 96FBGA

IC DRAM 1GBIT PARALLEL 96FBGA

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1446595-AS4C64M16D3B-12BINTR AS4C64M16D3B-12BINTR-ND 774-AS4C64M16D3B-12BINTR AS4C64M16D3B-12BINTR AS4C64M16D3B-12BINTR AS4C64M16D3B-12BINTR
Product Name DRAM Memory Memory IC and Storage Component Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
Package Type 96-TFBGA BGA; Tape & Reel (TR) BGA BGA; 96-TFBGA
Supply Voltage 1.425V ~ 1.575V 1.425V ~ 1.575V 1.425V ~ 1.575V 1.425V ~ 1.575V
Access Time 20 ns 20 ns 20 ns 20 ns
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