IC DRAM 1GBIT PARALLEL 96FBGA Product overview: AS4C64M16D3B-12BAN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C64M16D3B-12B
IC DRAM 1GBIT PARALLEL 96FBGA
SDRAM - DDR3 Memory IC 1Gbit Parallel 800 MHz 20 ns 96-FBGA (9x13)
IC DRAM 1GBIT PARALLEL 96FBGA
IC DRAM 1GBIT PARALLEL 96FBGA
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-AS4C64M16D3B-12BAN | AS4C64M16D3B-12BAN | AS4C64M16D3B-12BAN | AS4C64M16D3B-12BAN | AS4C64M16D3B-12BAN |
| Product Name | Memory IC and Storage Component | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | Volatile; DRAM Chip | SDRAM - DDR3; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Access Time | 20 ns | 20 ns | 20 ns | 20 ns | 20 ns |
| Cycle Time | 15 ns | ||||
| Operating Temperature | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | |
| Address Bus Width | 16 bits |
