Alliance Memory, Inc. Memory AS4C64M16D2B-25BCNTR

Description
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-FBGA (8x12.5)
Datasheet
Description
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-FBGA (8x12.5)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS4C64M16D2B-25BCNTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-FBGA (8x12.5)

SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-FBGA (8x12.5)

Buy Now Datasheet
IC DRAM 1GBIT PARALLEL 84FBGA

IC DRAM 1GBIT PARALLEL 84FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AS4C64M16D2B-25BCNTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C64M16D2B-25BCNTR
Integrated Circuits (ICs) - Memory AS4C64M16D2B-25BCNTR
IC DRAM 1GBIT PARALLEL 84FBGA

IC DRAM 1GBIT PARALLEL 84FBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C64M16D2B-25BCNTR AS4C64M16D2B-25BCNTR AS4C64M16D2B-25BCNTR
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.4000 ns 0.4000 ns 0.4000 ns
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
Density 1000000 kbits 1000000 kbits 1000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 27S23JC - Lingto Electronic Limited
Rochester Electronics
View Details
3 suppliers
Memory - 16-3636-01 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Flash Memory - 1882682 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details