Alliance Memory, Inc. Integrated Circuits (ICs) - Memory - Memory AS4C512M8D4A-75BIN

Description
4G, DDR4, 512 X 8, 1.2V, 78-BALL
Datasheet
Description
4G, DDR4, 512 X 8, 1.2V, 78-BALL
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS4C512M8D4A-75BIN
Integrated Circuits (ICs) - Memory - Memory AS4C512M8D4A-75BIN
4G, DDR4, 512 X 8, 1.2V, 78-BALL

4G, DDR4, 512 X 8, 1.2V, 78-BALL

Supplier's Site
Memory - AS4C512M8D4A-75BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR4 Memory IC 4Gbit POD 1.333 GHz 18 ns 78-FBGA (7.5x11)

SDRAM - DDR4 Memory IC 4Gbit POD 1.333 GHz 18 ns 78-FBGA (7.5x11)

Buy Now Datasheet

Technical Specifications

  Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number AS4C512M8D4A-75BIN AS4C512M8D4A-75BIN
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip
Data Rate 1333 MHz
Cycle Time 15 ns
Density 4000000 kbits 4000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Controllers - BQ2201PNG4 - Quarktwin Technology Ltd.
Texas Instruments
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type DIP; 8-DIP (0.300\", 7.62mm)
Supply Voltage 4.5V ~ 5.5V
View Details
2 suppliers
Memory - 5962-8996701MXA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 60 ns
Density 64 kbits
View Details
Memory - 568.005.011 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - SMJ44C256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details