512M X 8, 1.35V, 800MHZ, DDR3-16 Product overview: AS4C512M8D3LC-12BIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.35V, 800MHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.35V, 800MHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C512M8D3LC-12
DDR3, 4G, 512M x 8, 1.35V, 78-Ball FBGA
Category: DRAM
Win Source Part Number: 1446643-AS4C512M8D3L
Manufacturer: Alliance Memory, Inc.
512M X 8, 1.35V, 800MHZ, DDR3-16
512M X 8, 1.35V, 800MHZ, DDR3-16
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-AS4C512M8D3LC-12BIN | 665412 | 1446643-AS4C512M8D3LC-12BIN | AS4C512M8D3LC-12BIN | AS4C512M8D3LC-12BIN | AS4C512M8D3LC-12BIN |
| Product Name | 1.35V 800MHZ Memory IC and Storage Component | SDRAM | DRAM | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | ||||
| Access Time | 20 ns | |||||
| Cycle Time | 15 ns | |||||
| Operating Temperature | -40 to 95 C (-40 to 203 F) | |||||
| Address Bus Width | 8 bits |
