Alliance Memory, Inc. Memory AS4C512M8D3B-12BINTR

Description
IC DRAM 4GBIT PARALLEL 78FBGA
Datasheet
Description
IC DRAM 4GBIT PARALLEL 78FBGA
Datasheet

Suppliers

Company
Product
Description
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IC DRAM 4GBIT PARALLEL 78FBGA

IC DRAM 4GBIT PARALLEL 78FBGA

Supplier's Site Datasheet
Memory - AS4C512M8D3B-12BINTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3 Memory IC 4Gbit Parallel 800 MHz 20 ns 78-FBGA (9x10.5)

SDRAM - DDR3 Memory IC 4Gbit Parallel 800 MHz 20 ns 78-FBGA (9x10.5)

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Integrated Circuits (ICs) - Memory - AS4C512M8D3B-12BINTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C512M8D3B-12BINTR
Integrated Circuits (ICs) - Memory AS4C512M8D3B-12BINTR
IC DRAM 4GBIT PARALLEL 78FBGA

IC DRAM 4GBIT PARALLEL 78FBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C512M8D3B-12BINTR AS4C512M8D3B-12BINTR AS4C512M8D3B-12BINTR
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 20 ns 20 ns 20 ns
Density 4000000 kbits 4000000 kbits 4000000 kbits
Operating Temperature -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
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