Alliance Memory, Inc. Integrated Circuits (ICs) - Memory AS4C512M8D3B-12BINTR

Description
IC DRAM 4GBIT PARALLEL 78FBGA
Datasheet
Description
IC DRAM 4GBIT PARALLEL 78FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - AS4C512M8D3B-12BINTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C512M8D3B-12BINTR
Integrated Circuits (ICs) - Memory AS4C512M8D3B-12BINTR
IC DRAM 4GBIT PARALLEL 78FBGA

IC DRAM 4GBIT PARALLEL 78FBGA

Supplier's Site
Memory - AS4C512M8D3B-12BINTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3 Memory IC 4Gbit Parallel 800 MHz 20 ns 78-FBGA (9x10.5)

SDRAM - DDR3 Memory IC 4Gbit Parallel 800 MHz 20 ns 78-FBGA (9x10.5)

Buy Now
IC DRAM 4GBIT PARALLEL 78FBGA

IC DRAM 4GBIT PARALLEL 78FBGA

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C512M8D3B-12BINTR AS4C512M8D3B-12BINTR AS4C512M8D3B-12BINTR
Product Name Integrated Circuits (ICs) - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 800 MHz
Access Time 20 ns 20 ns 20 ns
Operating Temperature -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS5SP256K36 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SSRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 2048 kbits
View Details
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962F2122201PXE - 5962F2122201PXE - Infineon Technologies AG
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 512000 kbits
Package Type PG-TQFP-100
View Details
Flash Memory - 1882525 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details
Memory - 71024S20TYI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 1000 kbits
View Details