Alliance Memory, Inc. Integrated Circuits (ICs) - Memory AS4C512M8D3B-12BINTR

Description
IC DRAM 4GBIT PARALLEL 78FBGA
Datasheet
Description
IC DRAM 4GBIT PARALLEL 78FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - AS4C512M8D3B-12BINTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C512M8D3B-12BINTR
Integrated Circuits (ICs) - Memory AS4C512M8D3B-12BINTR
IC DRAM 4GBIT PARALLEL 78FBGA

IC DRAM 4GBIT PARALLEL 78FBGA

Supplier's Site
IC DRAM 4GBIT PARALLEL 78FBGA

IC DRAM 4GBIT PARALLEL 78FBGA

Supplier's Site Datasheet
Memory - AS4C512M8D3B-12BINTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3 Memory IC 4Gbit Parallel 800 MHz 20 ns 78-FBGA (9x10.5)

SDRAM - DDR3 Memory IC 4Gbit Parallel 800 MHz 20 ns 78-FBGA (9x10.5)

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Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C512M8D3B-12BINTR AS4C512M8D3B-12BINTR AS4C512M8D3B-12BINTR
Product Name Integrated Circuits (ICs) - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 800 MHz
Access Time 20 ns 20 ns 20 ns
Operating Temperature -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
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