Alliance Memory, Inc. Memory AS4C512M8D3B-12BIN

Description
SDRAM - DDR3 Memory IC 4Gbit Parallel 800 MHz 20 ns 78-FBGA (9x10.5)
Datasheet
Description
SDRAM - DDR3 Memory IC 4Gbit Parallel 800 MHz 20 ns 78-FBGA (9x10.5)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS4C512M8D3B-12BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3 Memory IC 4Gbit Parallel 800 MHz 20 ns 78-FBGA (9x10.5)

SDRAM - DDR3 Memory IC 4Gbit Parallel 800 MHz 20 ns 78-FBGA (9x10.5)

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Integrated Circuits (ICs) - Memory - AS4C512M8D3B-12BIN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C512M8D3B-12BIN
Integrated Circuits (ICs) - Memory AS4C512M8D3B-12BIN
IC DRAM 4GBIT PARALLEL 78FBGA

IC DRAM 4GBIT PARALLEL 78FBGA

Supplier's Site
IC DRAM 4GBIT PARALLEL 78FBGA

IC DRAM 4GBIT PARALLEL 78FBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C512M8D3B-12BIN AS4C512M8D3B-12BIN AS4C512M8D3B-12BIN
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 20 ns 20 ns 20 ns
Operating Temperature -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
Density 4000000 kbits 4000000 kbits 4000000 kbits
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