Alliance Memory, Inc. Integrated Circuits (ICs) - Memory - Memory AS4C512M16D4-75BINTR

Description
MEMORY
Datasheet
Description
MEMORY
Datasheet

Suppliers

Company
Product
Description
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Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS4C512M16D4-75BINTR
Integrated Circuits (ICs) - Memory - Memory AS4C512M16D4-75BINTR
MEMORY

MEMORY

Supplier's Site
Memory - AS4C512M16D4-75BINTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR4 Memory IC 8Gbit POD 1.333 GHz 18 ns 96-FBGA (7.5x13)

SDRAM - DDR4 Memory IC 8Gbit POD 1.333 GHz 18 ns 96-FBGA (7.5x13)

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Technical Specifications

  Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number AS4C512M16D4-75BINTR AS4C512M16D4-75BINTR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip
Cycle Time 18 ns
Density 8000000 kbits 8000000 kbits
Package Type 1.333 GHz BGA; 96-TFBGA
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