Alliance Memory, Inc. Integrated Circuits (ICs) - Memory - Memory AS4C512M16D3LC-12BCN

Description
IC DRAM 8GBIT PARALLEL 96FBGA
Datasheet
Description
IC DRAM 8GBIT PARALLEL 96FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS4C512M16D3LC-12BCN
Integrated Circuits (ICs) - Memory - Memory AS4C512M16D3LC-12BCN
IC DRAM 8GBIT PARALLEL 96FBGA

IC DRAM 8GBIT PARALLEL 96FBGA

Supplier's Site
Memory - AS4C512M16D3LC-12BCN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3L Memory IC 8Gbit Parallel 800 MHz 20 ns 96-FBGA (9x13)

SDRAM - DDR3L Memory IC 8Gbit Parallel 800 MHz 20 ns 96-FBGA (9x13)

Buy Now Datasheet

Technical Specifications

  Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number AS4C512M16D3LC-12BCN AS4C512M16D3LC-12BCN
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip
Data Rate 800 MHz
Cycle Time 15 ns
Density 8000000 kbits 8000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - SMJ27C512 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EPROM; UVEPROM
Access Time 15 to 25 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - NM27C020T200 - Quarktwin Technology Ltd.
Texas Instruments
Specs
Memory Category EPROM; EPROM
Access Time 200 ns
Operating Temperature 0 to 70 C (32 to 158 F)
View Details
2 suppliers
Memory IC and Storage Component - 774-HYB39S128160CT-8 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
View Details
SDRAM - 1882632P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Density 2048000 kbits
View Details