Alliance Memory, Inc. Memory AS4C512M16D3LB-12BINTR

Description
SDRAM - DDR3L Memory IC 8Gb (512M x 16) Parallel 800MHz 20ns 96-FBGA (13.5x9)
  • Memory - 1450-AS4C512M16D3LB-12BINTR-ND - DigiKey
    DigiKey
  • DRAM - 1446750-AS4C512M16D3LB-12BINTR - Win Source Electronics
    Win Source Electronics
  • Memory IC and Storage Component - 774-AS4C512M16D3LB-12BINTR - ERSAELECTRONICS PTE. LTD.
    ERSAELECTRONICS PTE. LTD.
  • Integrated Circuits (ICs) - Memory - AS4C512M16D3LB-12BINTR - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Memory - AS4C512M16D3LB-12BINTR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - AS4C512M16D3LB-12BINTR - Lingto Electronic Limited
    Lingto Electronic Limited
Request a Quote Datasheet
Description
SDRAM - DDR3L Memory IC 8Gb (512M x 16) Parallel 800MHz 20ns 96-FBGA (13.5x9)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 1450-AS4C512M16D3LB-12BINTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Memory
1450-AS4C512M16D3LB-12BINTR-ND
Memory 1450-AS4C512M16D3LB-12BINTR-ND
SDRAM - DDR3L Memory IC 8Gb (512M x 16) Parallel 800MHz 20ns 96-FBGA (13.5x9)

SDRAM - DDR3L Memory IC 8Gb (512M x 16) Parallel 800MHz 20ns 96-FBGA (13.5x9)

Buy Now Datasheet
DRAM - 1446750-AS4C512M16D3LB-12BINTR - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
DRAM
1446750-AS4C512M16D3LB-12BINTR
DRAM 1446750-AS4C512M16D3LB-12BINTR
Category: DRAM Win Source Part Number: 1446750-AS4C512M16D3 LB-12BINTR Manufacturer: Alliance Memory, Inc.

Category: DRAM
Win Source Part Number: 1446750-AS4C512M16D3LB-12BINTR
Manufacturer: Alliance Memory, Inc.

Buy Now
Memory IC and Storage Component - 774-AS4C512M16D3LB-12BINTR - ERSAELECTRONICS PTE. LTD.
ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-AS4C512M16D3LB-12BINTR
Memory IC and Storage Component 774-AS4C512M16D3LB-12BINTR
IC DRAM 8GBIT PARALLEL 96FBGA Product overview: AS4C512M16D3LB-12BIN TR from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C512M16D3LB-1 2BINTR can be used for catalog matching and distributor lookup.

IC DRAM 8GBIT PARALLEL 96FBGA Product overview: AS4C512M16D3LB-12BINTR from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C512M16D3LB-12BINTR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AS4C512M16D3LB-12BINTR - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C512M16D3LB-12BINTR
Integrated Circuits (ICs) - Memory AS4C512M16D3LB-12BINTR
IC DRAM 8GBIT PARALLEL 96FBGA

IC DRAM 8GBIT PARALLEL 96FBGA

Supplier's Site
Memory - AS4C512M16D3LB-12BINTR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
AS4C512M16D3LB-12BINTR
Memory AS4C512M16D3LB-12BINTR
SDRAM - DDR3L Memory IC 8Gbit Parallel 800 MHz 20 ns 96-FBGA (13.5x9)

SDRAM - DDR3L Memory IC 8Gbit Parallel 800 MHz 20 ns 96-FBGA (13.5x9)

Buy Now Datasheet
Memory - AS4C512M16D3LB-12BINTR - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
AS4C512M16D3LB-12BINTR
Memory AS4C512M16D3LB-12BINTR
IC DRAM 8GBIT PARALLEL 96FBGA

IC DRAM 8GBIT PARALLEL 96FBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1450-AS4C512M16D3LB-12BINTR-ND 1446750-AS4C512M16D3LB-12BINTR 774-AS4C512M16D3LB-12BINTR AS4C512M16D3LB-12BINTR AS4C512M16D3LB-12BINTR AS4C512M16D3LB-12BINTR
Product Name Memory DRAM Memory IC and Storage Component Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
Package Type 96-TFBGA BGA; Tape & Reel (TR) BGA BGA; 96-TFBGA
Supply Voltage 1.283V ~ 1.45V 1.283V ~ 1.45V 1.283V ~ 1.45V 1.283V ~ 1.45V
Access Time 20 ns 20 ns 20 ns 20 ns
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