Alliance Memory, Inc. DRAM AS4C512M16D3LB-12BIN

Description
Category: DRAM Win Source Part Number: 1446576-AS4C512M16D3 LB-12BIN Manufacturer: Alliance Memory, Inc.
  • DRAM - 1446576-AS4C512M16D3LB-12BIN - Win Source Electronics
    Win Source Electronics
  • Memory IC and Storage Component - 774-AS4C512M16D3LB-12BIN - ERSAELECTRONICS PTE. LTD.
    ERSAELECTRONICS PTE. LTD.
  • Memory - AS4C512M16D3LB-12BIN - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Integrated Circuits (ICs) - Memory - AS4C512M16D3LB-12BIN - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Memory - AS4C512M16D3LB-12BIN - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - AS4C512M16D3LB-12BIN - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
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Description
Category: DRAM Win Source Part Number: 1446576-AS4C512M16D3 LB-12BIN Manufacturer: Alliance Memory, Inc.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
DRAM - 1446576-AS4C512M16D3LB-12BIN - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
DRAM
1446576-AS4C512M16D3LB-12BIN
DRAM 1446576-AS4C512M16D3LB-12BIN
Category: DRAM Win Source Part Number: 1446576-AS4C512M16D3 LB-12BIN Manufacturer: Alliance Memory, Inc.

Category: DRAM
Win Source Part Number: 1446576-AS4C512M16D3LB-12BIN
Manufacturer: Alliance Memory, Inc.

Buy Now
Memory IC and Storage Component - 774-AS4C512M16D3LB-12BIN - ERSAELECTRONICS PTE. LTD.
ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-AS4C512M16D3LB-12BIN
Memory IC and Storage Component 774-AS4C512M16D3LB-12BIN
IC DRAM 8GBIT PARALLEL 96FBGA Product overview: AS4C512M16D3LB-12BIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C512M16D3LB-1 2BIN can be used for catalog matching and distributor lookup.

IC DRAM 8GBIT PARALLEL 96FBGA Product overview: AS4C512M16D3LB-12BIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C512M16D3LB-12BIN can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - AS4C512M16D3LB-12BIN - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Memory
AS4C512M16D3LB-12BIN
Memory AS4C512M16D3LB-12BIN
IC DRAM 8GBIT PARALLEL 96FBGA

IC DRAM 8GBIT PARALLEL 96FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AS4C512M16D3LB-12BIN - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C512M16D3LB-12BIN
Integrated Circuits (ICs) - Memory AS4C512M16D3LB-12BIN
IC DRAM 8GBIT PARALLEL 96FBGA

IC DRAM 8GBIT PARALLEL 96FBGA

Supplier's Site
Memory - AS4C512M16D3LB-12BIN - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
AS4C512M16D3LB-12BIN
Memory AS4C512M16D3LB-12BIN
IC DRAM 8GBIT PARALLEL 96FBGA

IC DRAM 8GBIT PARALLEL 96FBGA

Supplier's Site Datasheet
Memory - AS4C512M16D3LB-12BIN - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
AS4C512M16D3LB-12BIN
Memory AS4C512M16D3LB-12BIN
SDRAM - DDR3L Memory IC 8Gbit Parallel 800 MHz 20 ns 96-FBGA (13.5x9)

SDRAM - DDR3L Memory IC 8Gbit Parallel 800 MHz 20 ns 96-FBGA (13.5x9)

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1446576-AS4C512M16D3LB-12BIN 774-AS4C512M16D3LB-12BIN AS4C512M16D3LB-12BIN AS4C512M16D3LB-12BIN AS4C512M16D3LB-12BIN AS4C512M16D3LB-12BIN
Product Name DRAM Memory IC and Storage Component Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category Volatile; DRAM Chip SDRAM - DDR3L; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Access Time 20 ns 20 ns 20 ns 20 ns 20 ns
Cycle Time 15 ns
Operating Temperature -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
Address Bus Width 16 bits
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