Alliance Memory, Inc. Integrated Circuits (ICs) - Memory AS4C4M32S-6BINTR

Description
IC DRAM 128MBIT PARALLEL 90TFBGA
Datasheet
Description
IC DRAM 128MBIT PARALLEL 90TFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - AS4C4M32S-6BINTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C4M32S-6BINTR
Integrated Circuits (ICs) - Memory AS4C4M32S-6BINTR
IC DRAM 128MBIT PARALLEL 90TFBGA

IC DRAM 128MBIT PARALLEL 90TFBGA

Supplier's Site
SDRAM,128M,3.3V,166Mhz,4M x 32,90ball BGA - AS4C4M32S-6BINTR - Karl Kruse GmbH & Co. KG
Kaarst, Germany
SDRAM,128M,3.3V,166Mhz,4M x 32,90ball BGA
AS4C4M32S-6BINTR
SDRAM,128M,3.3V,166Mhz,4M x 32,90ball BGA AS4C4M32S-6BINTR
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet
IC DRAM 128MBIT PARALLEL 90TFBGA

IC DRAM 128MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
Memory - AS4C4M32S-6BINTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 90-TFBGA (8x13)

SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 90-TFBGA (8x13)

Buy Now Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Karl Kruse GmbH & Co. KG Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AS4C4M32S-6BINTR AS4C4M32S-6BINTR AS4C4M32S-6BINTR AS4C4M32S-6BINTR
Product Name Integrated Circuits (ICs) - Memory SDRAM,128M,3.3V,166Mhz,4M x 32,90ball BGA Memory Memory
Memory Category Volatile; DRAM Chip DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 166 MHz
Access Time 5.4 ns 5.4 ns 5.4 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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