Alliance Memory, Inc. Memory AS4C4M32S-6BINTR

Description
IC DRAM 128MBIT PARALLEL 90TFBGA
Datasheet
Description
IC DRAM 128MBIT PARALLEL 90TFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 128MBIT PARALLEL 90TFBGA

IC DRAM 128MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
Memory - AS4C4M32S-6BINTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 90-TFBGA (8x13)

SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 90-TFBGA (8x13)

Buy Now Datasheet
SDRAM,128M,3.3V,166Mhz,4M x 32,90ball BGA - AS4C4M32S-6BINTR - Karl Kruse GmbH & Co. KG
Kaarst, Germany
SDRAM,128M,3.3V,166Mhz,4M x 32,90ball BGA
AS4C4M32S-6BINTR
SDRAM,128M,3.3V,166Mhz,4M x 32,90ball BGA AS4C4M32S-6BINTR
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AS4C4M32S-6BINTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C4M32S-6BINTR
Integrated Circuits (ICs) - Memory AS4C4M32S-6BINTR
IC DRAM 128MBIT PARALLEL 90TFBGA

IC DRAM 128MBIT PARALLEL 90TFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Karl Kruse GmbH & Co. KG Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AS4C4M32S-6BINTR AS4C4M32S-6BINTR AS4C4M32S-6BINTR AS4C4M32S-6BINTR
Product Name Memory Memory SDRAM,128M,3.3V,166Mhz,4M x 32,90ball BGA Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip DRAM Chip Volatile; DRAM Chip
Access Time 5.4 ns 5.4 ns 5.4 ns
Density 128000 kbits 128000 kbits 128000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS5C4008 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
SDRAM - 2420777 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 0.4000 ns
Number of Words 64000 k
View Details
Memory - 51-35161Z01-A - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers