Alliance Memory, Inc. Memory AS4C4M32S-6BIN

Description
IC DRAM 128MBIT PARALLEL 90TFBGA
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Description
IC DRAM 128MBIT PARALLEL 90TFBGA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 128MBIT PARALLEL 90TFBGA

IC DRAM 128MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
DRAM - 1447455-AS4C4M32S-6BIN - Win Source Electronics
Laguna Hills, CA, United States
Category: DRAM Win Source Part Number: 1447455-AS4C4M32S-6B IN Manufacturer: Alliance Memory, Inc.

Category: DRAM
Win Source Part Number: 1447455-AS4C4M32S-6BIN
Manufacturer: Alliance Memory, Inc.

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Memory - 1450-1156-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 128Mb (4M x 32) Parallel 166MHz 5.4ns 90-TFBGA (8x13)

SDRAM Memory IC 128Mb (4M x 32) Parallel 166MHz 5.4ns 90-TFBGA (8x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - AS4C4M32S-6BIN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C4M32S-6BIN
Integrated Circuits (ICs) - Memory AS4C4M32S-6BIN
IC DRAM 128MBIT PARALLEL 90TFBGA

IC DRAM 128MBIT PARALLEL 90TFBGA

Supplier's Site
IC DRAM 128MBIT PARALLEL 90TFBGA

IC DRAM 128MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
SDRAM,128M,3.3V,166Mhz,4M x 32,90ball BGA - AS4C4M32S-6BIN - Karl Kruse GmbH & Co. KG
Kaarst, Germany
SDRAM,128M,3.3V,166Mhz,4M x 32,90ball BGA
AS4C4M32S-6BIN
SDRAM,128M,3.3V,166Mhz,4M x 32,90ball BGA AS4C4M32S-6BIN
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet
Memory - AS4C4M32S-6BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 90-TFBGA (8x13)

SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 90-TFBGA (8x13)

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Karl Kruse GmbH & Co. KG Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AS4C4M32S-6BIN 1447455-AS4C4M32S-6BIN 1450-1156-ND AS4C4M32S-6BIN AS4C4M32S-6BIN AS4C4M32S-6BIN AS4C4M32S-6BIN
Product Name Memory DRAM Memory Integrated Circuits (ICs) - Memory Memory SDRAM,128M,3.3V,166Mhz,4M x 32,90ball BGA Memory
Memory Category SDRAM; DRAM Chip DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM Chip DRAM; DRAM Chip
Data Rate 166 MHz 166 MHz
Access Time 5.4 ns 5.4 ns 5.4 ns 5.4 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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