IC DRAM 128MBIT PARALLEL 90TFBGA
Category: DRAM
Win Source Part Number: 1447455-AS4C4M32S-6B
Manufacturer: Alliance Memory, Inc.
IC DRAM 128MBIT PAR 90TFBGA Product overview: AS4C4M32S-6BIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C4M32S-6BIN can be used for catalog matching and distributor lookup.
IC DRAM 128MBIT PARALLEL 90TFBGA
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
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SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 90-TFBGA (8x13)
IC DRAM 128MBIT PARALLEL 90TFBGA
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Karl Kruse GmbH & Co. KG | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | AS4C4M32S-6BIN | 1447455-AS4C4M32S-6BIN | 774-AS4C4M32S-6BIN | AS4C4M32S-6BIN | AS4C4M32S-6BIN | AS4C4M32S-6BIN | AS4C4M32S-6BIN |
| Product Name | Memory | DRAM | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory | SDRAM,128M,3.3V,166Mhz,4M x 32,90ball BGA | Memory | Memory |
| Memory Category | SDRAM; DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | |
| Data Rate | 166 MHz | 166 MHz | |||||
| Access Time | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | ||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |||
| Density | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits |
