Win Source Part Number: 1027840-AS4C4M16S-6B
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 348
Mounting: SMD (SMT)
Technology: SDRAM
Memory Type: Volatile
Memory Size: 64Mb (4M x 16)
Access Time: 5.4 ns
Voltage - Supply: 3V ~ 3.6V
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: DRAM
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 2ns
Memory Interface: Parallel
Alternative Parts (Cross-Reference): IS42S16400J-6BLI-TR;
ECCN: 3A991B2A
Fake Threat In the Open Market: 74 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0002
Mfr: Alliance Memory, Inc.
Other Names: 1450-1077
Product Status: Obsolete
IC DRAM 64MBIT PARALLEL 54TFBGA Product overview: AS4C4M16S-6BIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C4M16S-6BIN can be used for catalog matching and distributor lookup.
IC DRAM 64MBIT PARALLEL 54TFBGA
IC DRAM 64MBIT PARALLEL 54TFBGA
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We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.
SDRAM Memory IC 64Mbit Parallel 166 MHz 5.4 ns 54-TFBGA (8x8)
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Karl Kruse GmbH & Co. KG | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 1027840-AS4C4M16S-6BIN | 774-AS4C4M16S-6BIN | AS4C4M16S-6BIN | AS4C4M16S-6BIN | AS4C4M16S-6BIN | AS4C4M16S-6BIN |
| Product Name | Integrated Circuits (ICs) - Memory | Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory | SDRAM,64M,3.3V,166MHz,4M x 16,54ball BGA | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip |
| Access Time | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | |
| Cycle Time | 2 ns | |||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
