Alliance Memory, Inc. Integrated Circuits (ICs) - Memory AS4C4M16S-6BIN

Description
Win Source Part Number: 1027840-AS4C4M16S-6B IN Category: Integrated Circuits (ICs)>Memory Package: Tray Standard Package: 348 Mounting: SMD (SMT) Technology: SDRAM Memory Type: Volatile Memory Size: 64Mb (4M x 16) Access Time: 5.4 ns Voltage - Supply: 3V ~ 3.6V Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8) Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: DRAM Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 2ns Memory Interface: Parallel Alternative Parts (Cross-Reference): IS42S16400J-6BLI-TR; IS42S16400J-6BL; IS42S16400J-6BLI; CY7C10212DV33-10BVXI ; MT47H64M8SH-25E:HAS4 C4M16S6BIN; ECCN: 3A991B2A Fake Threat In the Open Market: 74 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0002 Mfr: Alliance Memory, Inc. Other Names: 1450-1077 Product Status: Obsolete
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Description
Win Source Part Number: 1027840-AS4C4M16S-6B IN Category: Integrated Circuits (ICs)>Memory Package: Tray Standard Package: 348 Mounting: SMD (SMT) Technology: SDRAM Memory Type: Volatile Memory Size: 64Mb (4M x 16) Access Time: 5.4 ns Voltage - Supply: 3V ~ 3.6V Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8) Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: DRAM Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 2ns Memory Interface: Parallel Alternative Parts (Cross-Reference): IS42S16400J-6BLI-TR; IS42S16400J-6BL; IS42S16400J-6BLI; CY7C10212DV33-10BVXI ; MT47H64M8SH-25E:HAS4 C4M16S6BIN; ECCN: 3A991B2A Fake Threat In the Open Market: 74 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0002 Mfr: Alliance Memory, Inc. Other Names: 1450-1077 Product Status: Obsolete
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Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - 1027840-AS4C4M16S-6BIN - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
1027840-AS4C4M16S-6BIN
Integrated Circuits (ICs) - Memory 1027840-AS4C4M16S-6BIN
Win Source Part Number: 1027840-AS4C4M16S-6B IN Category: Integrated Circuits (ICs)>Memory Package: Tray Standard Package: 348 Mounting: SMD (SMT) Technology: SDRAM Memory Type: Volatile Memory Size: 64Mb (4M x 16) Access Time: 5.4 ns Voltage - Supply: 3V ~ 3.6V Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8) Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: DRAM Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 2ns Memory Interface: Parallel Alternative Parts (Cross-Reference): IS42S16400J-6BLI-TR; IS42S16400J-6BL; IS42S16400J-6BLI; CY7C10212DV33-10BVXI ; MT47H64M8SH-25E:HAS4 C4M16S6BIN; ECCN: 3A991B2A Fake Threat In the Open Market: 74 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0002 Mfr: Alliance Memory, Inc. Other Names: 1450-1077 Product Status: Obsolete

Win Source Part Number: 1027840-AS4C4M16S-6BIN
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 348
Mounting: SMD (SMT)
Technology: SDRAM
Memory Type: Volatile
Memory Size: 64Mb (4M x 16)
Access Time: 5.4 ns
Voltage - Supply: 3V ~ 3.6V
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: DRAM
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 2ns
Memory Interface: Parallel
Alternative Parts (Cross-Reference): IS42S16400J-6BLI-TR; IS42S16400J-6BL; IS42S16400J-6BLI; CY7C10212DV33-10BVXI; MT47H64M8SH-25E:HAS4C4M16S6BIN;
ECCN: 3A991B2A
Fake Threat In the Open Market: 74 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0002
Mfr: Alliance Memory, Inc.
Other Names: 1450-1077
Product Status: Obsolete

Buy Now Datasheet
Memory IC and Storage Component - 774-AS4C4M16S-6BIN - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-AS4C4M16S-6BIN
Memory IC and Storage Component 774-AS4C4M16S-6BIN
IC DRAM 64MBIT PARALLEL 54TFBGA Product overview: AS4C4M16S-6BIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C4M16S-6BIN can be used for catalog matching and distributor lookup.

IC DRAM 64MBIT PARALLEL 54TFBGA Product overview: AS4C4M16S-6BIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C4M16S-6BIN can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IC DRAM 64MBIT PARALLEL 54TFBGA

IC DRAM 64MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet
Memory - AS4C4M16S-6BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 64Mbit Parallel 166 MHz 5.4 ns 54-TFBGA (8x8)

SDRAM Memory IC 64Mbit Parallel 166 MHz 5.4 ns 54-TFBGA (8x8)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - AS4C4M16S-6BIN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C4M16S-6BIN
Integrated Circuits (ICs) - Memory AS4C4M16S-6BIN
IC DRAM 64MBIT PARALLEL 54TFBGA

IC DRAM 64MBIT PARALLEL 54TFBGA

Supplier's Site
SDRAM,64M,3.3V,166MHz,4M x 16,54ball BGA - AS4C4M16S-6BIN - Karl Kruse GmbH & Co. KG
Kaarst, Germany
SDRAM,64M,3.3V,166MHz,4M x 16,54ball BGA
AS4C4M16S-6BIN
SDRAM,64M,3.3V,166MHz,4M x 16,54ball BGA AS4C4M16S-6BIN
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Karl Kruse GmbH & Co. KG
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1027840-AS4C4M16S-6BIN 774-AS4C4M16S-6BIN AS4C4M16S-6BIN AS4C4M16S-6BIN AS4C4M16S-6BIN AS4C4M16S-6BIN
Product Name Integrated Circuits (ICs) - Memory Memory IC and Storage Component Memory Memory Integrated Circuits (ICs) - Memory SDRAM,64M,3.3V,166MHz,4M x 16,54ball BGA
Memory Category Volatile; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM Chip
Access Time 5.4 ns 5.4 ns 5.4 ns 5.4 ns 5.4 ns
Cycle Time 2 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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