The AS4C32M16SM-7TIN is a 512Mbit Synchronous DRAM (SDRAM) from Quarktwin Technology Ltd., designed for high-speed applications. It features a configuration of 32 Meg x 16 bits, organized into four internal banks, allowing for efficient data access and management. The device operates at a clock frequency of 133 MHz with a cycle time of 7.5 ns at both CAS latencies of 2 and 3, making it suitable for PC133-compliant systems. This SDRAM supports programmable burst lengths of 1, 2, 4, 8, or full page, and includes auto precharge and self-refresh modes, enhancing its performance in various applications. It operates on a single 3.3V power supply and is compatible with LVTTL inputs and outputs. The AS4C32M16SM-7TIN is rated for an industrial temperature range of -40¬8C to +85¬8C, making it suitable for demanding environments. The memory is packaged in a 54-pin TSOP II (400 mil) form factor and is ROHS compliant.
IC DRAM 512MBIT PAR 54TSOP II Product overview: AS4C32M16SM-7TIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C32M16SM-7TIN
Manufacturer: Alliance Memory, Inc.
Win Source Part Number: 1147419-AS4C32M16SM-
Manufacturer Homepage: www.alsc.com
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
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IC DRAM 512MBIT PAR 54TSOP II
IC DRAM 512MBIT PAR 54TSOP II
SDRAM Memory IC 512Mbit Parallel 133 MHz 5.4 ns 54-TSOP II
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Karl Kruse GmbH & Co. KG | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-AS4C32M16SM-7TIN | 1147419-AS4C32M16SM-7TIN | AS4C32M16SM-7TIN | AS4C32M16SM-7TIN | AS4C32M16SM-7TIN | AS4C32M16SM-7TIN |
| Product Name | Memory IC and Storage Component | Memory - AS4C32M16SM-7TIN | SDRAM,512M ,3.3V,133MHz,32M x 16,54pin TSOP II | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | |
| Access Time | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | ||
| Cycle Time | 15 ns | |||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
