Alliance Memory, Inc. Integrated Circuits (ICs) - Memory AS4C32M16MSA-6BIN

Description
Win Source Part Number: 1032092-AS4C32M16MSA -6BIN Category: Integrated Circuits (ICs)>Memory Package: Tray Standard Package: 319 Mounting: SMD (SMT) Technology: SDRAM - Mobile SDRAM Memory Type: Volatile Memory Size: 512Mb (32M x 16) Access Time: 5.5 ns Voltage - Supply: 1.7V ~ 1.95V Package / Case: 54-VFBGA Supplier Device Package: 54-FBGA (8x8) Temperature Range - Operating: -40°C ~ 85°C (TJ) Memory Format: DRAM Clock Frequency: 166 MHz Memory Interface: Parallel Alternative Parts (Cross-Reference): AS4C32M16MSA-6BINAS4 C32M16MSA6BIN; ECCN: EAR99 Fake Threat In the Open Market: 72 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0028 Mfr: Alliance Memory, Inc. Other Names: 1450-1459,AS4C32M16M SA-6BIN-ND Base Product Number: AS4C32
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Description
Win Source Part Number: 1032092-AS4C32M16MSA -6BIN Category: Integrated Circuits (ICs)>Memory Package: Tray Standard Package: 319 Mounting: SMD (SMT) Technology: SDRAM - Mobile SDRAM Memory Type: Volatile Memory Size: 512Mb (32M x 16) Access Time: 5.5 ns Voltage - Supply: 1.7V ~ 1.95V Package / Case: 54-VFBGA Supplier Device Package: 54-FBGA (8x8) Temperature Range - Operating: -40°C ~ 85°C (TJ) Memory Format: DRAM Clock Frequency: 166 MHz Memory Interface: Parallel Alternative Parts (Cross-Reference): AS4C32M16MSA-6BINAS4 C32M16MSA6BIN; ECCN: EAR99 Fake Threat In the Open Market: 72 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0028 Mfr: Alliance Memory, Inc. Other Names: 1450-1459,AS4C32M16M SA-6BIN-ND Base Product Number: AS4C32
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Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - 1032092-AS4C32M16MSA-6BIN - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
1032092-AS4C32M16MSA-6BIN
Integrated Circuits (ICs) - Memory 1032092-AS4C32M16MSA-6BIN
Win Source Part Number: 1032092-AS4C32M16MSA -6BIN Category: Integrated Circuits (ICs)>Memory Package: Tray Standard Package: 319 Mounting: SMD (SMT) Technology: SDRAM - Mobile SDRAM Memory Type: Volatile Memory Size: 512Mb (32M x 16) Access Time: 5.5 ns Voltage - Supply: 1.7V ~ 1.95V Package / Case: 54-VFBGA Supplier Device Package: 54-FBGA (8x8) Temperature Range - Operating: -40°C ~ 85°C (TJ) Memory Format: DRAM Clock Frequency: 166 MHz Memory Interface: Parallel Alternative Parts (Cross-Reference): AS4C32M16MSA-6BINAS4 C32M16MSA6BIN; ECCN: EAR99 Fake Threat In the Open Market: 72 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0028 Mfr: Alliance Memory, Inc. Other Names: 1450-1459,AS4C32M16M SA-6BIN-ND Base Product Number: AS4C32

Win Source Part Number: 1032092-AS4C32M16MSA-6BIN
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 319
Mounting: SMD (SMT)
Technology: SDRAM - Mobile SDRAM
Memory Type: Volatile
Memory Size: 512Mb (32M x 16)
Access Time: 5.5 ns
Voltage - Supply: 1.7V ~ 1.95V
Package / Case: 54-VFBGA
Supplier Device Package: 54-FBGA (8x8)
Temperature Range - Operating: -40°C ~ 85°C (TJ)
Memory Format: DRAM
Clock Frequency: 166 MHz
Memory Interface: Parallel
Alternative Parts (Cross-Reference): AS4C32M16MSA-6BINAS4C32M16MSA6BIN;
ECCN: EAR99
Fake Threat In the Open Market: 72 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0028
Mfr: Alliance Memory, Inc.
Other Names: 1450-1459,AS4C32M16MSA-6BIN-ND
Base Product Number: AS4C32

Buy Now Datasheet
IC DRAM 512MBIT PARALLEL 54FBGA

IC DRAM 512MBIT PARALLEL 54FBGA

Supplier's Site Datasheet
Memory IC and Storage Component - 774-AS4C32M16MSA-6BIN - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-AS4C32M16MSA-6BIN
Memory IC and Storage Component 774-AS4C32M16MSA-6BIN
IC DRAM 512MBIT PARALLEL 54FBGA Product overview: AS4C32M16MSA-6BIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C32M16MSA-6BI N can be used for catalog matching and distributor lookup.

IC DRAM 512MBIT PARALLEL 54FBGA Product overview: AS4C32M16MSA-6BIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C32M16MSA-6BIN can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AS4C32M16MSA-6BIN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C32M16MSA-6BIN
Integrated Circuits (ICs) - Memory AS4C32M16MSA-6BIN
IC DRAM 512MBIT PARALLEL 54FBGA

IC DRAM 512MBIT PARALLEL 54FBGA

Supplier's Site
Memory - AS4C32M16MSA-6BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile SDRAM Memory IC 512Mbit Parallel 166 MHz 5.5 ns 54-FBGA (8x8)

SDRAM - Mobile SDRAM Memory IC 512Mbit Parallel 166 MHz 5.5 ns 54-FBGA (8x8)

Buy Now Datasheet
IC DRAM 512MBIT PARALLEL 54FBGA

IC DRAM 512MBIT PARALLEL 54FBGA

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1032092-AS4C32M16MSA-6BIN AS4C32M16MSA-6BIN 774-AS4C32M16MSA-6BIN AS4C32M16MSA-6BIN AS4C32M16MSA-6BIN AS4C32M16MSA-6BIN
Product Name Integrated Circuits (ICs) - Memory Memory Memory IC and Storage Component Integrated Circuits (ICs) - Memory Memory Memory
Memory Category Volatile; DRAM Chip SDRAM - Mobile SDRAM; DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Access Time 5.5 ns 5.5 ns 5.5 ns 5.5 ns 5.5 ns 5.5 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Supply Voltage 1.7V ~ 1.95V 1.7V ~ 1.95V 1.7V ~ 1.95V 1.7V ~ 1.95V 1.7V ~ 1.95V
Data Rate 166 MHz 166 MHz
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