SDRAM - Mobile SDRAM Memory IC 512Mb (32M x 16) Parallel 166MHz 5.5ns 54-FBGA (8x8)
IC DRAM 512MBIT PARALLEL 54FBGA Product overview: AS4C32M16MSA-6BIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C32M16MSA-6BI
Win Source Part Number: 1032092-AS4C32M16MSA
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 319
Mounting: SMD (SMT)
Technology: SDRAM - Mobile SDRAM
Memory Type: Volatile
Memory Size: 512Mb (32M x 16)
Access Time: 5.5 ns
Voltage - Supply: 1.7V ~ 1.95V
Package / Case: 54-VFBGA
Supplier Device Package: 54-FBGA (8x8)
Temperature Range - Operating: -40°C ~ 85°C (TJ)
Memory Format: DRAM
Clock Frequency: 166 MHz
Memory Interface: Parallel
Alternative Parts (Cross-Reference): AS4C32M16MSA-6BINAS4
ECCN: EAR99
Fake Threat In the Open Market: 72 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0028
Mfr: Alliance Memory, Inc.
Other Names: 1450-1459,AS4C32M16M
Base Product Number: AS4C32
SDRAM - Mobile SDRAM Memory IC 512Mbit Parallel 166 MHz 5.5 ns 54-FBGA (8x8)
IC DRAM 512MBIT PARALLEL 54FBGA
IC DRAM 512MBIT PARALLEL 54FBGA
IC DRAM 512MBIT PARALLEL 54FBGA
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Quarktwin Technology Ltd. | Lingto Electronic Limited | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 1450-1459-ND | 774-AS4C32M16MSA-6BIN | 1032092-AS4C32M16MSA-6BIN | AS4C32M16MSA-6BIN | AS4C32M16MSA-6BIN | AS4C32M16MSA-6BIN | AS4C32M16MSA-6BIN |
| Product Name | Memory | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | SDRAM - Mobile SDRAM; DRAM Chip | Volatile; DRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | ||
| Package Type | 54-VFBGA | BGA; Tray | BGA; 54-VFBGA | 54-VFBGA | BGA | ||
| Supply Voltage | 1.7V ~ 1.95V | 1.7V ~ 1.95V | 1.7V ~ 1.95V | 1.7V ~ 1.95V | 1.7V ~ 1.95V | 1.7V ~ 1.95V |
