IC DRAM 512MBIT PARALLEL 54BGA Product overview: AS4C32M16MS-7BCN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C32M16MS-7BCN
Category: DRAM
Win Source Part Number: 1447472-AS4C32M16MS-
Manufacturer: Alliance Memory, Inc.
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IC DRAM 512MBIT PARALLEL 54BGA
SDRAM - Mobile SDRAM Memory IC 512Mbit Parallel 133 MHz 5.4 ns 54-BGA (9x8)
IC DRAM 512MBIT PARALLEL 54BGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Karl Kruse GmbH & Co. KG | Lingto Electronic Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-AS4C32M16MS-7BCN | 1447472-AS4C32M16MS-7BCN | AS4C32M16MS-7BCN | AS4C32M16MS-7BCN | AS4C32M16MS-7BCN | AS4C32M16MS-7BCN |
| Product Name | Memory IC and Storage Component | DRAM | Mobile SDRAM 32Mx16 BGA54 | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Access Time | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | ||
| Cycle Time | 15 ns | |||||
| Operating Temperature | -25 to 85 C (-13 to 185 F) | -25 to 85 C (-13 to 185 F) | -25 to 85 C (-13 to 185 F) | |||
| Address Bus Width | 16 bits |
