Alliance Memory, Inc. Integrated Circuits (ICs) - Memory AS4C32M16MD1-6BCN

Description
IC DRAM 512MBIT PARALLEL 60FPBGA
Datasheet
Description
IC DRAM 512MBIT PARALLEL 60FPBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - AS4C32M16MD1-6BCN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C32M16MD1-6BCN
Integrated Circuits (ICs) - Memory AS4C32M16MD1-6BCN
IC DRAM 512MBIT PARALLEL 60FPBGA

IC DRAM 512MBIT PARALLEL 60FPBGA

Supplier's Site
IC DRAM 512MBIT PARALLEL 60FPBGA

IC DRAM 512MBIT PARALLEL 60FPBGA

Supplier's Site Datasheet
Memory - AS4C32M16MD1-6BCN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 166 MHz 700 ps 60-FBGA (8x9)

SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 166 MHz 700 ps 60-FBGA (8x9)

Buy Now

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C32M16MD1-6BCN AS4C32M16MD1-6BCN AS4C32M16MD1-6BCN
Product Name Integrated Circuits (ICs) - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 166 MHz
Access Time 0.7000 ns 0.7000 ns 0.7000 ns
Operating Temperature -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71024S20YG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 1000 kbits
View Details
SDRAM - 2420769 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details