Alliance Memory, Inc. Integrated Circuits (ICs) - Memory AS4C32M16MD1-6BCN

Description
IC DRAM 512MBIT PARALLEL 60FPBGA
Datasheet
Description
IC DRAM 512MBIT PARALLEL 60FPBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - AS4C32M16MD1-6BCN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C32M16MD1-6BCN
Integrated Circuits (ICs) - Memory AS4C32M16MD1-6BCN
IC DRAM 512MBIT PARALLEL 60FPBGA

IC DRAM 512MBIT PARALLEL 60FPBGA

Supplier's Site
Memory - AS4C32M16MD1-6BCN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 166 MHz 700 ps 60-FBGA (8x9)

SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 166 MHz 700 ps 60-FBGA (8x9)

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IC DRAM 512MBIT PARALLEL 60FPBGA

IC DRAM 512MBIT PARALLEL 60FPBGA

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C32M16MD1-6BCN AS4C32M16MD1-6BCN AS4C32M16MD1-6BCN
Product Name Integrated Circuits (ICs) - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 166 MHz
Access Time 0.7000 ns 0.7000 ns 0.7000 ns
Operating Temperature -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F)
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