IC DRAM 512MBIT PARALLEL 60FPBGA
SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 166 MHz 700 ps 60-FBGA (8x9)
IC DRAM 512MBIT PARALLEL 60FPBGA
| Lingto Electronic Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | AS4C32M16MD1-6BCN | AS4C32M16MD1-6BCN | AS4C32M16MD1-6BCN |
| Product Name | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Access Time | 0.7000 ns | 0.7000 ns | 0.7000 ns |
| Density | 512000 kbits | 512000 kbits | 512000 kbits |
| Operating Temperature | -25 to 85 C (-13 to 185 F) | -25 to 85 C (-13 to 185 F) |
