Alliance Memory, Inc. Memory AS4C32M16MD1-6BCN

Description
SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 166 MHz 700 ps 60-FBGA (8x9)
Datasheet
Description
SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 166 MHz 700 ps 60-FBGA (8x9)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS4C32M16MD1-6BCN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 166 MHz 700 ps 60-FBGA (8x9)

SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 166 MHz 700 ps 60-FBGA (8x9)

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IC DRAM 512MBIT PARALLEL 60FPBGA

IC DRAM 512MBIT PARALLEL 60FPBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AS4C32M16MD1-6BCN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C32M16MD1-6BCN
Integrated Circuits (ICs) - Memory AS4C32M16MD1-6BCN
IC DRAM 512MBIT PARALLEL 60FPBGA

IC DRAM 512MBIT PARALLEL 60FPBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C32M16MD1-6BCN AS4C32M16MD1-6BCN AS4C32M16MD1-6BCN
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.7000 ns 0.7000 ns 0.7000 ns
Operating Temperature -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits
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