Alliance Memory, Inc. Memory AS4C32M16MD1-6BCN

Description
IC DRAM 512MBIT PARALLEL 60FPBGA
Datasheet
Description
IC DRAM 512MBIT PARALLEL 60FPBGA
Datasheet

Suppliers

Company
Product
Description
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IC DRAM 512MBIT PARALLEL 60FPBGA

IC DRAM 512MBIT PARALLEL 60FPBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AS4C32M16MD1-6BCN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C32M16MD1-6BCN
Integrated Circuits (ICs) - Memory AS4C32M16MD1-6BCN
IC DRAM 512MBIT PARALLEL 60FPBGA

IC DRAM 512MBIT PARALLEL 60FPBGA

Supplier's Site
Memory - AS4C32M16MD1-6BCN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 166 MHz 700 ps 60-FBGA (8x9)

SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 166 MHz 700 ps 60-FBGA (8x9)

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Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C32M16MD1-6BCN AS4C32M16MD1-6BCN AS4C32M16MD1-6BCN
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 0.7000 ns 0.7000 ns 0.7000 ns
Density 512000 kbits 512000 kbits 512000 kbits
Data Rate 166 MHz
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