Alliance Memory, Inc. Memory AS4C32M16MD1-5BIN

Description
IC DRAM 512MBIT PARALLEL 60FBGA
Datasheet
Description
IC DRAM 512MBIT PARALLEL 60FBGA
Datasheet

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Product
Description
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IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Memory - AS4C32M16MD1-5BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-FBGA (8x9)

SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-FBGA (8x9)

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Mobile DDR SDRAM,512M,32M x 16,1.8V,60-ball FPBGA - AS4C32M16MD1-5BIN - Karl Kruse GmbH & Co. KG
Kaarst, Germany
Mobile DDR SDRAM,512M,32M x 16,1.8V,60-ball FPBGA
AS4C32M16MD1-5BIN
Mobile DDR SDRAM,512M,32M x 16,1.8V,60-ball FPBGA AS4C32M16MD1-5BIN
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site
Integrated Circuits (ICs) - Memory - AS4C32M16MD1-5BIN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C32M16MD1-5BIN
Integrated Circuits (ICs) - Memory AS4C32M16MD1-5BIN
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Karl Kruse GmbH & Co. KG Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AS4C32M16MD1-5BIN AS4C32M16MD1-5BIN AS4C32M16MD1-5BIN AS4C32M16MD1-5BIN
Product Name Memory Memory Mobile DDR SDRAM,512M,32M x 16,1.8V,60-ball FPBGA Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip DRAM Chip Volatile; DRAM Chip
Access Time 0.7000 ns 0.7000 ns 0.7000 ns
Density 512000 kbits 512000 kbits 512000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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