Alliance Memory, Inc. Memory AS4C32M16MD1-5BIN

Description
SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-FBGA (8x9)
Datasheet
Description
SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-FBGA (8x9)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS4C32M16MD1-5BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-FBGA (8x9)

SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-FBGA (8x9)

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Integrated Circuits (ICs) - Memory - AS4C32M16MD1-5BIN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C32M16MD1-5BIN
Integrated Circuits (ICs) - Memory AS4C32M16MD1-5BIN
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site
Mobile DDR SDRAM,512M,32M x 16,1.8V,60-ball FPBGA - AS4C32M16MD1-5BIN - Karl Kruse GmbH & Co. KG
Kaarst, Germany
Mobile DDR SDRAM,512M,32M x 16,1.8V,60-ball FPBGA
AS4C32M16MD1-5BIN
Mobile DDR SDRAM,512M,32M x 16,1.8V,60-ball FPBGA AS4C32M16MD1-5BIN
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Karl Kruse GmbH & Co. KG Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AS4C32M16MD1-5BIN AS4C32M16MD1-5BIN AS4C32M16MD1-5BIN AS4C32M16MD1-5BIN
Product Name Memory Integrated Circuits (ICs) - Memory Mobile DDR SDRAM,512M,32M x 16,1.8V,60-ball FPBGA Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM Chip DRAM; DRAM Chip
Access Time 0.7000 ns 0.7000 ns 0.7000 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits
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