Alliance Memory, Inc. Memory AS4C32M16D2-25BIN

Description
SDRAM - DDR2 Memory IC 512Mbit Parallel 400 MHz 400 ps 84-TFBGA (8x12.5)
Datasheet
Description
SDRAM - DDR2 Memory IC 512Mbit Parallel 400 MHz 400 ps 84-TFBGA (8x12.5)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS4C32M16D2-25BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 512Mbit Parallel 400 MHz 400 ps 84-TFBGA (8x12.5)

SDRAM - DDR2 Memory IC 512Mbit Parallel 400 MHz 400 ps 84-TFBGA (8x12.5)

Buy Now Datasheet
DDR2 SDRAM,512M,32M x 16,1.8V,84ball FBGA - AS4C32M16D2-25BIN - Karl Kruse GmbH & Co. KG
Kaarst, Germany
DDR2 SDRAM,512M,32M x 16,1.8V,84ball FBGA
AS4C32M16D2-25BIN
DDR2 SDRAM,512M,32M x 16,1.8V,84ball FBGA AS4C32M16D2-25BIN
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet
IC DRAM 512MBIT PARALLEL 84TFBGA

IC DRAM 512MBIT PARALLEL 84TFBGA

Supplier's Site Datasheet
IC DRAM 512MBIT PARALLEL 84TFBGA

IC DRAM 512MBIT PARALLEL 84TFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AS4C32M16D2-25BIN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C32M16D2-25BIN
Integrated Circuits (ICs) - Memory AS4C32M16D2-25BIN
IC DRAM 512MBIT PARALLEL 84TFBGA

IC DRAM 512MBIT PARALLEL 84TFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Karl Kruse GmbH & Co. KG ODG (Origin Data Global) Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AS4C32M16D2-25BIN AS4C32M16D2-25BIN AS4C32M16D2-25BIN AS4C32M16D2-25BIN AS4C32M16D2-25BIN
Product Name Memory DDR2 SDRAM,512M,32M x 16,1.8V,84ball FBGA Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM Chip SDRAM - DDR2; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.4000 ns 0.4000 ns 0.4000 ns 0.4000 ns
Operating Temperature -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
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