The AS4C32M16D1A-5TIN is a 512Mb DDR Synchronous DRAM (SDRAM) from Quarktwin Technology Ltd., designed for high-speed applications. It operates at a clock frequency of 200 MHz, providing a data rate of 400 Mbps per pin. The memory is organized as a quad bank structure, with each bank consisting of 8M x 16 bits, allowing for efficient data access. This memory device supports fully synchronous operation with differential clock inputs and bi-directional data strobe (DQS). It features programmable burst lengths of 2, 4, or 8, and offers options for CAS latency settings of 2, 2.5, or 3. The AS4C32M16D1A-5TIN includes auto refresh and self-refresh capabilities, ensuring reliable performance in various operating conditions. The device is packaged in a 66-pin TSOP II format and is suitable for industrial applications with an operating temperature range of -40¬8C to 85¬8C. It requires a power supply of 2.5V ¬± 0.2V and is Pb and halogen-free, making it compliant with environmental standards. This memory is particularly well-suited for applications that demand high memory bandwidth, such as main memory and graphics processing.
Manufacturer: Alliance Memory, Inc.
Win Source Part Number: 1147415-AS4C32M16D1A
Manufacturer Homepage: www.alsc.com
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
IC DRAM 512MBIT PAR 66TSOP II
IC DRAM 512MBIT PAR 66TSOP II Product overview: AS4C32M16D1A-5TIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C32M16D1A-5TI
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 66-TSOP II
IC DRAM 512MBIT PAR 66TSOP II
IC DRAM 512MBIT PAR 66TSOP II
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| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Karl Kruse GmbH & Co. KG | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 1147415-AS4C32M16D1A-5TIN | AS4C32M16D1A-5TIN | 774-AS4C32M16D1A-5TIN | AS4C32M16D1A-5TIN | AS4C32M16D1A-5TIN | AS4C32M16D1A-5TIN | AS4C32M16D1A-5TIN |
| Product Name | Memory - AS4C32M16D1A-5TIN | Memory | Memory IC and Storage Component | Memory | Memory | Integrated Circuits (ICs) - Memory | DDR SDRAM,512M,32M x 16,2.5V,66pin TSOP II |
| Memory Category | SDRAM - DDR; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | |
| Data Rate | 200 MHz | 200 MHz | |||||
| Access Time | 0.7000 ns | 0.7000 ns | 0.7000 ns | 0.7000 ns | 0.7000 ns | ||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |||
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits |
