Alliance Memory, Inc. Integrated Circuits (ICs) - Memory AS4C32M16D1-5BINTR

Description
IC DRAM 512MBIT PARALLEL 60TFBGA
Datasheet
Description
IC DRAM 512MBIT PARALLEL 60TFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - AS4C32M16D1-5BINTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C32M16D1-5BINTR
Integrated Circuits (ICs) - Memory AS4C32M16D1-5BINTR
IC DRAM 512MBIT PARALLEL 60TFBGA

IC DRAM 512MBIT PARALLEL 60TFBGA

Supplier's Site
DDR SDRAM,512M,32M x 16,2.5V,60ball BGA - AS4C32M16D1-5BINTR - Karl Kruse GmbH & Co. KG
Kaarst, Germany
DDR SDRAM,512M,32M x 16,2.5V,60ball BGA
AS4C32M16D1-5BINTR
DDR SDRAM,512M,32M x 16,2.5V,60ball BGA AS4C32M16D1-5BINTR
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet
IC DRAM 512MBIT PARALLEL 60TFBGA

IC DRAM 512MBIT PARALLEL 60TFBGA

Supplier's Site Datasheet
Memory - AS4C32M16D1-5BINTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-TFBGA (8x13)

SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-TFBGA (8x13)

Buy Now Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Karl Kruse GmbH & Co. KG Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AS4C32M16D1-5BINTR AS4C32M16D1-5BINTR AS4C32M16D1-5BINTR AS4C32M16D1-5BINTR
Product Name Integrated Circuits (ICs) - Memory DDR SDRAM,512M,32M x 16,2.5V,60ball BGA Memory Memory
Memory Category Volatile; DRAM Chip DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 200 MHz
Access Time 0.7000 ns 0.7000 ns 0.7000 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 28486511 B - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - 9338PCQR - Quarktwin Technology Ltd.
Texas Instruments
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type DIP; 16-DIP (0.300\", 7.62mm)
Supply Voltage 4.75V ~ 5.25V
View Details
Memory - AS8ER128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 150 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details